A 210-GHz fT SiGe HBT with a non-self-aligned structure

S. J. Jeng; B. Jagannathan; J. S. Rieh; J. Johnson; K. T. Schonenberg; D. Greenberg; A. Stricker; H. Chen; M. Khater; D. Ahlgren; G. Freeman; K. Stein; S. Subbanna

doi:10.1109/55.962657

A 210-GHz f_T SiGe HBT with a non-self-aligned structure

S. J. Jeng, B. Jagannathan, J. S. Rieh, J. Johnson, K. T. Schonenberg, D. Greenberg, A. Stricker, H. Chen, M. Khater, D. Ahlgren, G. Freeman, K. Stein, S. Subbanna

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

A record 210-GHz f_T SiGe heterojunction bipolar transistor at a collector current density of 6-9 mA/μm² is fabricated with a new nonself-aligned (NSA) structure based on 0.18 μm technology. This NSA structure has a low-complexity emitter and extrinsic base process which reduces overall thermal cycle and minimizes transient enhanced diffusion. A low-power performance has been achieved which requires only 1 mA collector current to reach 200-GHz f_T. The performance is a result of narrow base width and reduced parasitics in the device. Detailed comparison is made to a 120-GHz self-aligned production device.

Original language	English
Pages (from-to)	542-544
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	22
Issue number	11
DOIs	https://doi.org/10.1109/55.962657
Publication status	Published - 2001 Nov
Externally published	Yes

Keywords

Bipolar transistors
Germanium
Semiconductor heterojunctions
Silicon

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/55.962657

Cite this

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title = "A 210-GHz fT SiGe HBT with a non-self-aligned structure",

abstract = "A record 210-GHz fT SiGe heterojunction bipolar transistor at a collector current density of 6-9 mA/μm2 is fabricated with a new nonself-aligned (NSA) structure based on 0.18 μm technology. This NSA structure has a low-complexity emitter and extrinsic base process which reduces overall thermal cycle and minimizes transient enhanced diffusion. A low-power performance has been achieved which requires only 1 mA collector current to reach 200-GHz fT. The performance is a result of narrow base width and reduced parasitics in the device. Detailed comparison is made to a 120-GHz self-aligned production device.",

keywords = "Bipolar transistors, Germanium, Semiconductor heterojunctions, Silicon",

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T1 - A 210-GHz fT SiGe HBT with a non-self-aligned structure

AU - Jeng, S. J.

AU - Jagannathan, B.

AU - Rieh, J. S.

AU - Johnson, J.

AU - Schonenberg, K. T.

AU - Greenberg, D.

AU - Stricker, A.

AU - Chen, H.

AU - Khater, M.

AU - Ahlgren, D.

AU - Freeman, G.

AU - Stein, K.

AU - Subbanna, S.

PY - 2001/11

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AB - A record 210-GHz fT SiGe heterojunction bipolar transistor at a collector current density of 6-9 mA/μm2 is fabricated with a new nonself-aligned (NSA) structure based on 0.18 μm technology. This NSA structure has a low-complexity emitter and extrinsic base process which reduces overall thermal cycle and minimizes transient enhanced diffusion. A low-power performance has been achieved which requires only 1 mA collector current to reach 200-GHz fT. The performance is a result of narrow base width and reduced parasitics in the device. Detailed comparison is made to a 120-GHz self-aligned production device.

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KW - Semiconductor heterojunctions

KW - Silicon

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