A 220-320 GHz single-pole single-throw switch

Younghwan Kim; Hyunkyu Lee; Sanggeun Jeon

doi:10.1109/RFIT.2016.7578184

A 220-320 GHz single-pole single-throw switch

Younghwan Kim, Hyunkyu Lee, Sanggeun Jeon

School of Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

9 Citations (Scopus)

Abstract

This paper presents a single-pole single-throw (SPST) switch operating over the entire WR-3 band. The SPST switch is composed of two shunt transistors and transmission lines in between to resonate the off capacitance of the transistors. The switch is implemented using a 250-nm InP DHBT technology. The measured insertion loss and isolation are no more than 2.9 dB and 13.1 dB, respectively, from 220 to 320 GHz. The return loss is better than 10.2 dB over the same bandwidth.

Original language	English
Title of host publication	RFIT 2016 - 2016 IEEE International Symposium on Radio-Frequency Integration Technology
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781509012350
DOIs	https://doi.org/10.1109/RFIT.2016.7578184
Publication status	Published - 2016 Sept 27
Event	2016 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2016 - Taipei, Taiwan, Province of China Duration: 2016 Aug 24 → 2016 Aug 26

Publication series

Name	RFIT 2016 - 2016 IEEE International Symposium on Radio-Frequency Integration Technology

Other

Other	2016 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2016
Country/Territory	Taiwan, Province of China
City	Taipei
Period	16/8/24 → 16/8/26

Bibliographical note

Publisher Copyright:
© 2016 IEEE.

Keywords

InP DHBT
OOK modulator
RF switch
SPST
WR-3

ASJC Scopus subject areas

Computer Networks and Communications
Electrical and Electronic Engineering
Instrumentation

Access to Document

10.1109/RFIT.2016.7578184

Cite this

Kim, Y., Lee, H., & Jeon, S. (2016). A 220-320 GHz single-pole single-throw switch. In RFIT 2016 - 2016 IEEE International Symposium on Radio-Frequency Integration Technology Article 7578184 (RFIT 2016 - 2016 IEEE International Symposium on Radio-Frequency Integration Technology). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/RFIT.2016.7578184

A 220-320 GHz single-pole single-throw switch. / Kim, Younghwan; Lee, Hyunkyu; Jeon, Sanggeun.
RFIT 2016 - 2016 IEEE International Symposium on Radio-Frequency Integration Technology. Institute of Electrical and Electronics Engineers Inc., 2016. 7578184 (RFIT 2016 - 2016 IEEE International Symposium on Radio-Frequency Integration Technology).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Kim, Y, Lee, H & Jeon, S 2016, A 220-320 GHz single-pole single-throw switch. in RFIT 2016 - 2016 IEEE International Symposium on Radio-Frequency Integration Technology., 7578184, RFIT 2016 - 2016 IEEE International Symposium on Radio-Frequency Integration Technology, Institute of Electrical and Electronics Engineers Inc., 2016 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2016, Taipei, Taiwan, Province of China, 16/8/24. https://doi.org/10.1109/RFIT.2016.7578184

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A 220-320 GHz single-pole single-throw switch

Abstract

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Bibliographical note

Keywords

ASJC Scopus subject areas

Access to Document

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