A 280-GHz 10-dBm Signal Source Based on InP HBT Technology

Jongwon Yun; Jungsoo Kim; Jae Sung Rieh

doi:10.1109/LMWC.2016.2646928

A 280-GHz 10-dBm Signal Source Based on InP HBT Technology

Jongwon Yun, Jungsoo Kim, Jae Sung Rieh

Research output: Contribution to journal › Article › peer-review

17 Citations (Scopus)

Abstract

A 280-GHz high-power signal source has been developed in this work based on a 250-nm InP heterojunction bipolar transistor (HBT) technology. The fabricated signal source is composed of two in-phase locked common-base cross-coupled oscillators, the output of which is on-chip combined by a pair of rat-race couplers and a Wilkinson power combiner for enhanced output power. The developed signal source exhibits an oscillation frequency of 276.4 GHz and a phase noise of-89 dBc/Hz at 1 MHz offset. The output power of the signal source is measured to be 10 dBm (10 mW), while consuming a dc power of 196 mW (dc-to-RF efficiency of 5.1%).

Original language	English
Article number	7827139
Pages (from-to)	159-161
Number of pages	3
Journal	IEEE Microwave and Wireless Components Letters
Volume	27
Issue number	2
DOIs	https://doi.org/10.1109/LMWC.2016.2646928
Publication status	Published - 2017 Feb

Bibliographical note

Funding Information:
This work was supported by NRF grant funded by the Korea government (MSIP) (NRF-2015R1A2A1A05001836).

Publisher Copyright:
© 2017 IEEE.

Keywords

Heterojunction bipolar transistors
injection locked oscillators
power combining
submillimeter wave integrated circuits

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

Access to Document

10.1109/LMWC.2016.2646928

Cite this

@article{571086902e654811a0b728b12414e0f3,

title = "A 280-GHz 10-dBm Signal Source Based on InP HBT Technology",

abstract = "A 280-GHz high-power signal source has been developed in this work based on a 250-nm InP heterojunction bipolar transistor (HBT) technology. The fabricated signal source is composed of two in-phase locked common-base cross-coupled oscillators, the output of which is on-chip combined by a pair of rat-race couplers and a Wilkinson power combiner for enhanced output power. The developed signal source exhibits an oscillation frequency of 276.4 GHz and a phase noise of-89 dBc/Hz at 1 MHz offset. The output power of the signal source is measured to be 10 dBm (10 mW), while consuming a dc power of 196 mW (dc-to-RF efficiency of 5.1%).",

keywords = "Heterojunction bipolar transistors, injection locked oscillators, power combining, submillimeter wave integrated circuits",

author = "Jongwon Yun and Jungsoo Kim and Rieh, {Jae Sung}",

note = "Funding Information: This work was supported by NRF grant funded by the Korea government (MSIP) (NRF-2015R1A2A1A05001836). Publisher Copyright: {\textcopyright} 2017 IEEE.",

year = "2017",

month = feb,

doi = "10.1109/LMWC.2016.2646928",

language = "English",

volume = "27",

pages = "159--161",

journal = "IEEE Microwave and Wireless Components Letters",

issn = "1531-1309",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "2",

}

TY - JOUR

T1 - A 280-GHz 10-dBm Signal Source Based on InP HBT Technology

AU - Yun, Jongwon

AU - Kim, Jungsoo

AU - Rieh, Jae Sung

PY - 2017/2

Y1 - 2017/2

N2 - A 280-GHz high-power signal source has been developed in this work based on a 250-nm InP heterojunction bipolar transistor (HBT) technology. The fabricated signal source is composed of two in-phase locked common-base cross-coupled oscillators, the output of which is on-chip combined by a pair of rat-race couplers and a Wilkinson power combiner for enhanced output power. The developed signal source exhibits an oscillation frequency of 276.4 GHz and a phase noise of-89 dBc/Hz at 1 MHz offset. The output power of the signal source is measured to be 10 dBm (10 mW), while consuming a dc power of 196 mW (dc-to-RF efficiency of 5.1%).

AB - A 280-GHz high-power signal source has been developed in this work based on a 250-nm InP heterojunction bipolar transistor (HBT) technology. The fabricated signal source is composed of two in-phase locked common-base cross-coupled oscillators, the output of which is on-chip combined by a pair of rat-race couplers and a Wilkinson power combiner for enhanced output power. The developed signal source exhibits an oscillation frequency of 276.4 GHz and a phase noise of-89 dBc/Hz at 1 MHz offset. The output power of the signal source is measured to be 10 dBm (10 mW), while consuming a dc power of 196 mW (dc-to-RF efficiency of 5.1%).

KW - Heterojunction bipolar transistors

KW - injection locked oscillators

KW - power combining

KW - submillimeter wave integrated circuits

UR - http://www.scopus.com/inward/record.url?scp=85010223602&partnerID=8YFLogxK

U2 - 10.1109/LMWC.2016.2646928

DO - 10.1109/LMWC.2016.2646928

M3 - Article

AN - SCOPUS:85010223602

SN - 1531-1309

VL - 27

SP - 159

EP - 161

JO - IEEE Microwave and Wireless Components Letters

JF - IEEE Microwave and Wireless Components Letters

IS - 2

M1 - 7827139

ER -

A 280-GHz 10-dBm Signal Source Based on InP HBT Technology

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this