A 280-GHz 10-dBm Signal Source Based on InP HBT Technology

Jongwon Yun, Jungsoo Kim, Jae Sung Rieh

    Research output: Contribution to journalArticlepeer-review

    17 Citations (Scopus)

    Abstract

    A 280-GHz high-power signal source has been developed in this work based on a 250-nm InP heterojunction bipolar transistor (HBT) technology. The fabricated signal source is composed of two in-phase locked common-base cross-coupled oscillators, the output of which is on-chip combined by a pair of rat-race couplers and a Wilkinson power combiner for enhanced output power. The developed signal source exhibits an oscillation frequency of 276.4 GHz and a phase noise of-89 dBc/Hz at 1 MHz offset. The output power of the signal source is measured to be 10 dBm (10 mW), while consuming a dc power of 196 mW (dc-to-RF efficiency of 5.1%).

    Original languageEnglish
    Article number7827139
    Pages (from-to)159-161
    Number of pages3
    JournalIEEE Microwave and Wireless Components Letters
    Volume27
    Issue number2
    DOIs
    Publication statusPublished - 2017 Feb

    Bibliographical note

    Funding Information:
    This work was supported by NRF grant funded by the Korea government (MSIP) (NRF-2015R1A2A1A05001836).

    Publisher Copyright:
    © 2017 IEEE.

    Keywords

    • Heterojunction bipolar transistors
    • injection locked oscillators
    • power combining
    • submillimeter wave integrated circuits

    ASJC Scopus subject areas

    • Condensed Matter Physics
    • Electrical and Electronic Engineering

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