A 280-GHz 10-dBm Signal Source Based on InP HBT Technology

Jongwon Yun, Jungsoo Kim, Jae Sung Rieh

Research output: Contribution to journalArticlepeer-review

16 Citations (Scopus)


A 280-GHz high-power signal source has been developed in this work based on a 250-nm InP heterojunction bipolar transistor (HBT) technology. The fabricated signal source is composed of two in-phase locked common-base cross-coupled oscillators, the output of which is on-chip combined by a pair of rat-race couplers and a Wilkinson power combiner for enhanced output power. The developed signal source exhibits an oscillation frequency of 276.4 GHz and a phase noise of-89 dBc/Hz at 1 MHz offset. The output power of the signal source is measured to be 10 dBm (10 mW), while consuming a dc power of 196 mW (dc-to-RF efficiency of 5.1%).

Original languageEnglish
Article number7827139
Pages (from-to)159-161
Number of pages3
JournalIEEE Microwave and Wireless Components Letters
Issue number2
Publication statusPublished - 2017 Feb

Bibliographical note

Funding Information:
This work was supported by NRF grant funded by the Korea government (MSIP) (NRF-2015R1A2A1A05001836).

Publisher Copyright:
© 2017 IEEE.


  • Heterojunction bipolar transistors
  • injection locked oscillators
  • power combining
  • submillimeter wave integrated circuits

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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