A 280-GHz 10-dBm Signal Source Based on InP HBT Technology

Jongwon Yun; Jungsoo Kim; Jae Sung Rieh

doi:10.1109/LMWC.2016.2646928

A 280-GHz 10-dBm Signal Source Based on InP HBT Technology

Jongwon Yun, Jungsoo Kim, Jae Sung Rieh

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

15 Citations (Scopus)

Abstract

A 280-GHz high-power signal source has been developed in this work based on a 250-nm InP heterojunction bipolar transistor (HBT) technology. The fabricated signal source is composed of two in-phase locked common-base cross-coupled oscillators, the output of which is on-chip combined by a pair of rat-race couplers and a Wilkinson power combiner for enhanced output power. The developed signal source exhibits an oscillation frequency of 276.4 GHz and a phase noise of-89 dBc/Hz at 1 MHz offset. The output power of the signal source is measured to be 10 dBm (10 mW), while consuming a dc power of 196 mW (dc-to-RF efficiency of 5.1%).

Original language	English
Article number	7827139
Pages (from-to)	159-161
Number of pages	3
Journal	IEEE Microwave and Wireless Components Letters
Volume	27
Issue number	2
DOIs	https://doi.org/10.1109/LMWC.2016.2646928
Publication status	Published - 2017 Feb

Bibliographical note

Funding Information:
This work was supported by NRF grant funded by the Korea government (MSIP) (NRF-2015R1A2A1A05001836).

Publisher Copyright:
© 2017 IEEE.

Keywords

Heterojunction bipolar transistors
injection locked oscillators
power combining
submillimeter wave integrated circuits

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

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10.1109/LMWC.2016.2646928

Cite this

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title = "A 280-GHz 10-dBm Signal Source Based on InP HBT Technology",

abstract = "A 280-GHz high-power signal source has been developed in this work based on a 250-nm InP heterojunction bipolar transistor (HBT) technology. The fabricated signal source is composed of two in-phase locked common-base cross-coupled oscillators, the output of which is on-chip combined by a pair of rat-race couplers and a Wilkinson power combiner for enhanced output power. The developed signal source exhibits an oscillation frequency of 276.4 GHz and a phase noise of-89 dBc/Hz at 1 MHz offset. The output power of the signal source is measured to be 10 dBm (10 mW), while consuming a dc power of 196 mW (dc-to-RF efficiency of 5.1%).",

keywords = "Heterojunction bipolar transistors, injection locked oscillators, power combining, submillimeter wave integrated circuits",

author = "Jongwon Yun and Jungsoo Kim and Rieh, {Jae Sung}",

note = "Funding Information: This work was supported by NRF grant funded by the Korea government (MSIP) (NRF-2015R1A2A1A05001836). Publisher Copyright: {\textcopyright} 2017 IEEE.",

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AU - Kim, Jungsoo

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AB - A 280-GHz high-power signal source has been developed in this work based on a 250-nm InP heterojunction bipolar transistor (HBT) technology. The fabricated signal source is composed of two in-phase locked common-base cross-coupled oscillators, the output of which is on-chip combined by a pair of rat-race couplers and a Wilkinson power combiner for enhanced output power. The developed signal source exhibits an oscillation frequency of 276.4 GHz and a phase noise of-89 dBc/Hz at 1 MHz offset. The output power of the signal source is measured to be 10 dBm (10 mW), while consuming a dc power of 196 mW (dc-to-RF efficiency of 5.1%).

KW - Heterojunction bipolar transistors

KW - injection locked oscillators

KW - power combining

KW - submillimeter wave integrated circuits

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A 280-GHz 10-dBm Signal Source Based on InP HBT Technology

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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