A power detector integrated with a preamplifier is fabricated using a 250-nm InP double-heterojunction bipolar transistor technology for 280-GHz operation. The input RF signal to the detector is modulated at 20 kHz to decouple the output dc voltage from 1/f noise. The integrated receiver detector consists of a two-way balun, a differential preamplifier, a power detector. Breakout circuits of a standalone power detector and a test amplifier have been independently characterized. The test amplifier shows a gain of 18.1 dB and noise figure of 14 dB. The responsivity and noise equivalent power of the detector improve from 4.5 to 350 kV/W and from 10 to 0.13 pW/Hz0.5, respectively, at 280 GHz, with the addition of the preamplifier. The performance enhancements due to the preamplifier are in close agreement with the results predicted by advanced design system simulations.
|Number of pages
|IEEE Transactions on Terahertz Science and Technology
|Published - 2017 Mar
Bibliographical notePublisher Copyright:
© 2011-2012 IEEE.
- InP HBT
- preamplified detector
- terahertz detector
- terahertz receiver
ASJC Scopus subject areas
- Electrical and Electronic Engineering