Abstract
A 290-GHz heterodyne integrated imager has been developed in a 65-nm CMOS technology. The imager consists of a mixer, an LO (local oscillator), an IF amplifier, and an IF detector. A responsivity of 20 kV/W and a noise equivalent power (NEP) of 29 pW/Hz1/2 were measured. Images were successfully acquired with an image acquisition setup that employs the fabricated imager circuit.
Original language | English |
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Title of host publication | RFIT 2016 - 2016 IEEE International Symposium on Radio-Frequency Integration Technology |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
ISBN (Electronic) | 9781509012350 |
DOIs | |
Publication status | Published - 2016 Sept 27 |
Event | 2016 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2016 - Taipei, Taiwan, Province of China Duration: 2016 Aug 24 → 2016 Aug 26 |
Publication series
Name | RFIT 2016 - 2016 IEEE International Symposium on Radio-Frequency Integration Technology |
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Other
Other | 2016 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2016 |
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Country/Territory | Taiwan, Province of China |
City | Taipei |
Period | 16/8/24 → 16/8/26 |
Bibliographical note
Publisher Copyright:© 2016 IEEE.
Copyright:
Copyright 2017 Elsevier B.V., All rights reserved.
Keywords
- CMOS
- CMOS integrated circuit
- imaging
- receivers
ASJC Scopus subject areas
- Computer Networks and Communications
- Electrical and Electronic Engineering
- Instrumentation