TY - GEN
T1 - A 290-GHz CMOS heterodyne integrated imager
AU - Yoon, Daekeun
AU - Kim, Jungsoo
AU - Rieh, Jae Sung
N1 - Publisher Copyright:
© 2016 IEEE.
Copyright:
Copyright 2017 Elsevier B.V., All rights reserved.
PY - 2016/9/27
Y1 - 2016/9/27
N2 - A 290-GHz heterodyne integrated imager has been developed in a 65-nm CMOS technology. The imager consists of a mixer, an LO (local oscillator), an IF amplifier, and an IF detector. A responsivity of 20 kV/W and a noise equivalent power (NEP) of 29 pW/Hz1/2 were measured. Images were successfully acquired with an image acquisition setup that employs the fabricated imager circuit.
AB - A 290-GHz heterodyne integrated imager has been developed in a 65-nm CMOS technology. The imager consists of a mixer, an LO (local oscillator), an IF amplifier, and an IF detector. A responsivity of 20 kV/W and a noise equivalent power (NEP) of 29 pW/Hz1/2 were measured. Images were successfully acquired with an image acquisition setup that employs the fabricated imager circuit.
KW - CMOS
KW - CMOS integrated circuit
KW - imaging
KW - receivers
UR - http://www.scopus.com/inward/record.url?scp=84994709519&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84994709519&partnerID=8YFLogxK
U2 - 10.1109/RFIT.2016.7578141
DO - 10.1109/RFIT.2016.7578141
M3 - Conference contribution
AN - SCOPUS:84994709519
T3 - RFIT 2016 - 2016 IEEE International Symposium on Radio-Frequency Integration Technology
BT - RFIT 2016 - 2016 IEEE International Symposium on Radio-Frequency Integration Technology
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2016 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2016
Y2 - 24 August 2016 through 26 August 2016
ER -