In this work, a 300-GHz 7 × 7 detector array based on a 65-nm Si CMOS technology has been developed and transmission imaging was performed using the detector array without any optical elements. The detector array consists of a 7-by-7 arrangement of 49 pixels in a full-chip size of 4 mm × 4 mm. The unit pixel is composed of a single direct detector with a differential common-gate configuration and a differential patch antenna. The fabricated CMOS detector array chip was mounted on a planar package for electrical characterization and imaging. The measured responsivity and the noise equivalent power (NEP) showed best values of 3599 V/W and 12.46 pW/Hz1/2, respectively, at 303 GHz. Various THz imaging experiments were carried out based on the packaged CMOS detector array with a setup that does not require optical elements or the raster scan of the target object.
|Number of pages||13|
|Journal||Journal of Infrared, Millimeter, and Terahertz Waves|
|Publication status||Published - 2020 Feb 1|
Bibliographical noteFunding Information:
This work was supported by Institute of Information & Communications Technology Planning & Evaluation (IITP) grant funded by the Korea government (MSIT) (No. 2016-0-00185) Springer Nature remains neutral with regard to jurisdictional claims in published maps and institutional affiliations.
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- Detector array
- Transmission imaging
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering