A 300-GHz integrated transmitter based on InP HBT technology

Heekang Son, Doyoon Kim, Kiryong Song, Jai Heon Cho, Jae Sung Rieh

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Citations (Scopus)


A 300-GHz integrated transmitter has been developed based on a 250-nm InP HBT technology. The transmitter is composed of a voltage-controlled oscillator (VCO) and a switch, which serve as a signal generator and a modulator, respectively. The VCO adopts a common-base cross coupled topology to acquire a high output power near 300 GHz. The output power and the frequency tuning range of the VCO are 3.8 dBm and 298 - 316.1 GHz, respectively. The switch, which employs a conventional traveling wave topology with three shunt transistor stages, exhibits an insertion loss of 2.4 dB and an isolation of 9.0 dB, both measured at 300 GHz. The integrated transmitter exhibits a peak output power of 0 dBm and -7 dBm for on- and off-state, respectively. The measured tuning range is 301.3 - 312.5 GHz.

Original languageEnglish
Title of host publication2018 Asia-Pacific Microwave Conference, APMC 2018 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Number of pages3
ISBN (Electronic)9784902339451
Publication statusPublished - 2018 Jul 2
Event30th Asia-Pacific Microwave Conference, APMC 2018 - Kyoto, Japan
Duration: 2018 Nov 62018 Nov 9

Publication series

NameAsia-Pacific Microwave Conference Proceedings, APMC


Conference30th Asia-Pacific Microwave Conference, APMC 2018

Bibliographical note

Funding Information:
This work was supported by Institute for Information & communications Technology Promotion (IITP) grant funded by the Korea government (MSIT) (No. B0717-16-0047).

Publisher Copyright:
© 2018 IEICE


  • Heterojunction bipolar transistors
  • Switches
  • Transmitters
  • VCOs

ASJC Scopus subject areas

  • Electrical and Electronic Engineering


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