A single-pole single-throw (SPST) switch operating around 300 GHz has been developed in this letter based on a 65-nm CMOS technology. The SPST switch adopts a novel coupled-line topology, in which MOSFETs are employed as a variable impedance component at the through- A nd coupled-ports to achieve a large isolation. Over the measured frequency band of 220-320 GHz, a minimum insertion loss of 3.9 dB (at 303 GHz) and a maximum isolation of 66 dB (at 250 GHz) were obtained. This achieved peak isolation is the largest value obtained so far beyond 100 GHz with a CMOS switch. An isolation larger than 39 dB was maintained for the entire frequency band measured. The measured return loss showed a maximum value of 29 dB at 312 GHz.
|Number of pages||4|
|Journal||IEEE Transactions on Terahertz Science and Technology|
|Publication status||Published - 2019 Mar|
Bibliographical noteFunding Information:
This work was supported by the Institute for Information and Communications Technology Planning and Evaluation grant funded by the Korea government (MSIT) under Grant B0717-16-0047.
Manuscript received October 22, 2018; revised December 20, 2018 and January 28, 2019; accepted February 4, 2019. Date of publication February 11, 2019; date of current version March 4, 2019. This work was supported by the Institute for Information & Communications Technology Planning & Evaluation grant funded by the Korea government (MSIT) under Grant B0717-16-0047. (Corresponding author: Jae-Sung Rieh.) The authors are with the School of Electrical Engineering, Korea University, Seoul 02841, South Korea (e-mail:, firstname.lastname@example.org; ryoungi@ korea.ac.kr; email@example.com; firstname.lastname@example.org).
© 2019 IEEE.
- CMOS technology
- coupled line
- single-pole single-throw (SPST)
ASJC Scopus subject areas
- Electrical and Electronic Engineering