Abstract
A single-pole single-throw (SPST) switch operating around 300 GHz has been developed in this letter based on a 65-nm CMOS technology. The SPST switch adopts a novel coupled-line topology, in which MOSFETs are employed as a variable impedance component at the through- A nd coupled-ports to achieve a large isolation. Over the measured frequency band of 220-320 GHz, a minimum insertion loss of 3.9 dB (at 303 GHz) and a maximum isolation of 66 dB (at 250 GHz) were obtained. This achieved peak isolation is the largest value obtained so far beyond 100 GHz with a CMOS switch. An isolation larger than 39 dB was maintained for the entire frequency band measured. The measured return loss showed a maximum value of 29 dB at 312 GHz.
Original language | English |
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Article number | 8638971 |
Pages (from-to) | 215-218 |
Number of pages | 4 |
Journal | IEEE Transactions on Terahertz Science and Technology |
Volume | 9 |
Issue number | 2 |
DOIs | |
Publication status | Published - 2019 Mar |
Keywords
- CMOS technology
- THz
- coupled line
- single-pole single-throw (SPST)
- switches
ASJC Scopus subject areas
- Radiation
- Electrical and Electronic Engineering