A 310-340-GHz Coupled-Line Voltage-Controlled Oscillator Based on 0.25-μm InP HBT Technology

Daekeun Yoon; Jongwon Yun; Jae Sung Rieh

doi:10.1109/TTHZ.2015.2443432

A 310-340-GHz Coupled-Line Voltage-Controlled Oscillator Based on 0.25-μm InP HBT Technology

Daekeun Yoon, Jongwon Yun, Jae Sung Rieh

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

23 Citations (Scopus)

Abstract

A THz voltage-controlled oscillator (VCO) has been developed in this work based on a 0.25-μm InP heterojunction bipolar transistor (HBT) technology. The cross-coupled push-push oscillator adopted a novel coupled-line topology, in which the DC blocking capacitors and the load inductance are replaced by a pair of coupled-lines to improve the oscillation frequency and reduce the circuit area. Also, a base bias tuning was employed for effective oscillation frequency tuning. The circuit exhibited the voltage tuning from 309.5 GHz to 339.5 GHz, leading to a tuning range of 30 GHz. The maximum output power was-6.5 dBm at 334 GHz, achieved with a dc power consumption of 13.5 mW. Measured phase noise was-86.55 at 10-MHz offset. The circuit occupies only 0.014 mm² excluding the probing pads.

Original language	English
Article number	7137691
Pages (from-to)	652-654
Number of pages	3
Journal	IEEE Transactions on Terahertz Science and Technology
Volume	5
Issue number	4
DOIs	https://doi.org/10.1109/TTHZ.2015.2443432
Publication status	Published - 2015 Jul 1

Keywords

Frequency control
Voltage-controlled oscillators (VCOs)
heterjunction bipolar transistor (HBT)

ASJC Scopus subject areas

Radiation
Electrical and Electronic Engineering

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10.1109/TTHZ.2015.2443432

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title = "A 310-340-GHz Coupled-Line Voltage-Controlled Oscillator Based on 0.25-μm InP HBT Technology",

abstract = "A THz voltage-controlled oscillator (VCO) has been developed in this work based on a 0.25-μm InP heterojunction bipolar transistor (HBT) technology. The cross-coupled push-push oscillator adopted a novel coupled-line topology, in which the DC blocking capacitors and the load inductance are replaced by a pair of coupled-lines to improve the oscillation frequency and reduce the circuit area. Also, a base bias tuning was employed for effective oscillation frequency tuning. The circuit exhibited the voltage tuning from 309.5 GHz to 339.5 GHz, leading to a tuning range of 30 GHz. The maximum output power was-6.5 dBm at 334 GHz, achieved with a dc power consumption of 13.5 mW. Measured phase noise was-86.55 at 10-MHz offset. The circuit occupies only 0.014 mm2 excluding the probing pads.",

keywords = "Frequency control, Voltage-controlled oscillators (VCOs), heterjunction bipolar transistor (HBT)",

author = "Daekeun Yoon and Jongwon Yun and Rieh, {Jae Sung}",

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AU - Yun, Jongwon

AU - Rieh, Jae Sung

PY - 2015/7/1

Y1 - 2015/7/1

N2 - A THz voltage-controlled oscillator (VCO) has been developed in this work based on a 0.25-μm InP heterojunction bipolar transistor (HBT) technology. The cross-coupled push-push oscillator adopted a novel coupled-line topology, in which the DC blocking capacitors and the load inductance are replaced by a pair of coupled-lines to improve the oscillation frequency and reduce the circuit area. Also, a base bias tuning was employed for effective oscillation frequency tuning. The circuit exhibited the voltage tuning from 309.5 GHz to 339.5 GHz, leading to a tuning range of 30 GHz. The maximum output power was-6.5 dBm at 334 GHz, achieved with a dc power consumption of 13.5 mW. Measured phase noise was-86.55 at 10-MHz offset. The circuit occupies only 0.014 mm2 excluding the probing pads.

AB - A THz voltage-controlled oscillator (VCO) has been developed in this work based on a 0.25-μm InP heterojunction bipolar transistor (HBT) technology. The cross-coupled push-push oscillator adopted a novel coupled-line topology, in which the DC blocking capacitors and the load inductance are replaced by a pair of coupled-lines to improve the oscillation frequency and reduce the circuit area. Also, a base bias tuning was employed for effective oscillation frequency tuning. The circuit exhibited the voltage tuning from 309.5 GHz to 339.5 GHz, leading to a tuning range of 30 GHz. The maximum output power was-6.5 dBm at 334 GHz, achieved with a dc power consumption of 13.5 mW. Measured phase noise was-86.55 at 10-MHz offset. The circuit occupies only 0.014 mm2 excluding the probing pads.

KW - Frequency control

KW - Voltage-controlled oscillators (VCOs)

KW - heterjunction bipolar transistor (HBT)

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A 310-340-GHz Coupled-Line Voltage-Controlled Oscillator Based on 0.25-μm InP HBT Technology

Abstract

Keywords

ASJC Scopus subject areas

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