A 325 GHz InP HBT differential-mode amplifier

J. B. Hacker, Y. M. Lee, H. J. Park, J. S. Rieh, M. Kim

Research output: Contribution to journalArticlepeer-review

16 Citations (Scopus)


An MMIC amplifier operating at the highest reported frequency up to date for indium-phosphide double-heterojunction bipolar (DHBT) transistor technology is presented. The amplifier chain consists of seven unit-cell stages that contain differential-pair common-base HBTs and compact inverted microstrip matching networks. Amplifier operation in differential mode generates a virtual RF ground at a convenient location inside the unit cell. The measurements at 325 GHz show a small signal gain of 25 dB and a maximum output power of -1.5 dBm. An amplifier gain of greater than 20 dB is observed over 60 GHz bandwidth extending from 285 to 345 GHz.

Original languageEnglish
Article number5739124
Pages (from-to)264-266
Number of pages3
JournalIEEE Microwave and Wireless Components Letters
Issue number5
Publication statusPublished - 2011 May

Bibliographical note

Funding Information:
Manuscript received October 21, 2010; revised December 27, 2010 and January 28, 2011; accepted February 11, 2011. Date of publication March 24, 2011; date of current version May 11, 2011. This work was supported by the IT R&D Program of MKE/KEIT [KI001855, Wireless Local Area Communication Systems on Tera Hertz Band].


  • InP HBT
  • monolithic microwave integrated circuit (MMIC)
  • terahertz amplifier

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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