A 3.3 V, 8.89 μa and 5.5 ppm/°C CMOS bandgap voltage reference for power telemetry in retinal prosthesis systems

Ruhaifi Abdullah Zawawi; Jae Kun Kim; Jong Bum Park; Seong Woo Kim; Asrulnizam Abd Manaf; Jungsuk Kim

doi:10.1109/EMBC.2018.8513090

A 3.3 V, 8.89 μa and 5.5 ppm/°C CMOS bandgap voltage reference for power telemetry in retinal prosthesis systems

Ruhaifi Abdullah Zawawi, Jae Kun Kim, Jong Bum Park, Seong Woo Kim, Asrulnizam Abd Manaf, Jungsuk Kim

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Citations (Scopus)

Abstract

A 3.3 V CMOS bandgap reference (BGR) was presented in this study that utilizes MOS transistors operating in the sub-threshold region. The complexity of the circuit and the dependency of the voltage reference on power supply variations are simultaneously decreased through the use of a new compensation circuit technique. The proposed BGR is simulated using a 0.35 μm CMOS standard process. Consequently, a 5.53 ppm/°C temperature coefficient is obtained in the -40∼+125 °C temperature range, the maximum power supply rejection ratio is - 62 dB, and a 2.033 mV/V voltage line regulation is achieved for the 2.3∼ 4.3 V supply voltage. The proposed circuit dissipates a supply current of 8.89 IJA at a 3.3 V supply voltage, and the active area is 112 μm× 60 μm.

Original language	English
Title of host publication	40th Annual International Conference of the IEEE Engineering in Medicine and Biology Society, EMBC 2018
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	2977-2980
Number of pages	4
ISBN (Electronic)	9781538636466
DOIs	https://doi.org/10.1109/EMBC.2018.8513090
Publication status	Published - 2018 Oct 26
Event	40th Annual International Conference of the IEEE Engineering in Medicine and Biology Society, EMBC 2018 - Honolulu, United States Duration: 2018 Jul 18 → 2018 Jul 21

Publication series

Name	Proceedings of the Annual International Conference of the IEEE Engineering in Medicine and Biology Society, EMBS
Volume	2018-July
ISSN (Print)	1557-170X

Other

Other	40th Annual International Conference of the IEEE Engineering in Medicine and Biology Society, EMBC 2018
Country/Territory	United States
City	Honolulu
Period	18/7/18 → 18/7/21

Bibliographical note

Funding Information:
ACKNOWLEDGMENT The authors would like to express their sincerest appreciation to the IC Design Education Center for chip fabrication. This work was supported by the National Research Foundation of Korea NRF-2017M3A9E2056461.

Funding Information:
*Research is supported by the the National Research Foundation of Korea.

Publisher Copyright:
© 2018 IEEE.

ASJC Scopus subject areas

Signal Processing
Biomedical Engineering
Computer Vision and Pattern Recognition
Health Informatics

Access to Document

10.1109/EMBC.2018.8513090

Cite this

Zawawi, R. A., Kim, J. K., Park, J. B., Kim, S. W., Manaf, A. A., & Kim, J. (2018). A 3.3 V, 8.89 μa and 5.5 ppm/°C CMOS bandgap voltage reference for power telemetry in retinal prosthesis systems. In 40th Annual International Conference of the IEEE Engineering in Medicine and Biology Society, EMBC 2018 (pp. 2977-2980). Article 8513090 (Proceedings of the Annual International Conference of the IEEE Engineering in Medicine and Biology Society, EMBS; Vol. 2018-July). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EMBC.2018.8513090

A 3.3 V, 8.89 μa and 5.5 ppm/°C CMOS bandgap voltage reference for power telemetry in retinal prosthesis systems. / Zawawi, Ruhaifi Abdullah; Kim, Jae Kun; Park, Jong Bum et al.
40th Annual International Conference of the IEEE Engineering in Medicine and Biology Society, EMBC 2018. Institute of Electrical and Electronics Engineers Inc., 2018. p. 2977-2980 8513090 (Proceedings of the Annual International Conference of the IEEE Engineering in Medicine and Biology Society, EMBS; Vol. 2018-July).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Zawawi, RA, Kim, JK, Park, JB, Kim, SW, Manaf, AA & Kim, J 2018, A 3.3 V, 8.89 μa and 5.5 ppm/°C CMOS bandgap voltage reference for power telemetry in retinal prosthesis systems. in 40th Annual International Conference of the IEEE Engineering in Medicine and Biology Society, EMBC 2018., 8513090, Proceedings of the Annual International Conference of the IEEE Engineering in Medicine and Biology Society, EMBS, vol. 2018-July, Institute of Electrical and Electronics Engineers Inc., pp. 2977-2980, 40th Annual International Conference of the IEEE Engineering in Medicine and Biology Society, EMBC 2018, Honolulu, United States, 18/7/18. https://doi.org/10.1109/EMBC.2018.8513090

Zawawi RA, Kim JK, Park JB, Kim SW, Manaf AA, Kim J. A 3.3 V, 8.89 μa and 5.5 ppm/°C CMOS bandgap voltage reference for power telemetry in retinal prosthesis systems. In 40th Annual International Conference of the IEEE Engineering in Medicine and Biology Society, EMBC 2018. Institute of Electrical and Electronics Engineers Inc. 2018. p. 2977-2980. 8513090. (Proceedings of the Annual International Conference of the IEEE Engineering in Medicine and Biology Society, EMBS). doi: 10.1109/EMBC.2018.8513090

Zawawi, Ruhaifi Abdullah ; Kim, Jae Kun ; Park, Jong Bum et al. / A 3.3 V, 8.89 μa and 5.5 ppm/°C CMOS bandgap voltage reference for power telemetry in retinal prosthesis systems. 40th Annual International Conference of the IEEE Engineering in Medicine and Biology Society, EMBC 2018. Institute of Electrical and Electronics Engineers Inc., 2018. pp. 2977-2980 (Proceedings of the Annual International Conference of the IEEE Engineering in Medicine and Biology Society, EMBS).

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abstract = "A 3.3 V CMOS bandgap reference (BGR) was presented in this study that utilizes MOS transistors operating in the sub-threshold region. The complexity of the circuit and the dependency of the voltage reference on power supply variations are simultaneously decreased through the use of a new compensation circuit technique. The proposed BGR is simulated using a 0.35 μm CMOS standard process. Consequently, a 5.53 ppm/°C temperature coefficient is obtained in the -40∼+125 °C temperature range, the maximum power supply rejection ratio is - 62 dB, and a 2.033 mV/V voltage line regulation is achieved for the 2.3∼ 4.3 V supply voltage. The proposed circuit dissipates a supply current of 8.89 IJA at a 3.3 V supply voltage, and the active area is 112 μm× 60 μm.",

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A 3.3 V, 8.89 μa and 5.5 ppm/°C CMOS bandgap voltage reference for power telemetry in retinal prosthesis systems

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