Abstract
A 350-GHz fundamental-mode oscillator with a common-base cross-coupled topology has been developed based on a 130-nm InP HBT technology. A fabricated oscillator with a typical performance showed an oscillation frequency of 344 GHz. The measured output power was 1.1 dBm with a DC power dissipation of 74.8 mW, leading to a DC-To-RF efficiency of 1.72 %. It was confirmed from the measurement that a base inductance of 4 pH (for a device size of 5-\mum emitter length) needs to be included for accurate prediction of the circuit performance, which would serve a useful guideline for circuit designs with the given process technology.
Original language | English |
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Title of host publication | RFIT 2022 - 2022 IEEE International Symposium on Radio-Frequency Integration Technology |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
Pages | 40-41 |
Number of pages | 2 |
ISBN (Electronic) | 9781665466493 |
DOIs | |
Publication status | Published - 2022 |
Event | 2022 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2022 - Busan, Korea, Republic of Duration: 2022 Aug 29 → 2022 Aug 31 |
Publication series
Name | RFIT 2022 - 2022 IEEE International Symposium on Radio-Frequency Integration Technology |
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Conference
Conference | 2022 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2022 |
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Country/Territory | Korea, Republic of |
City | Busan |
Period | 22/8/29 → 22/8/31 |
Bibliographical note
Funding Information:ACKNOWLEDGMENT This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korean government (NRF-2021R1A2C3009096). The authors thank IDEC for the design tool and MPW supports.
Publisher Copyright:
© 2022 IEEE.
Keywords
- Heterojunction bipolar transistors (HBTs)
- oscillators
- Terahertz (THz)
ASJC Scopus subject areas
- Computer Networks and Communications
- Hardware and Architecture
- Signal Processing
- Electrical and Electronic Engineering
- Instrumentation