A 6,13-bis(Triisopropylsilylethynyl) pentacene thin-film transistor using a spun-on inorganic gate-dielectric

Jae Hong Kwon; Jung Hoon Seo; Sang Il Shin; Kyung Hwan Kim; Dong Hoon Choi; In Byeong Kang; Hochul Kang; Byeong Kwon Ju

doi:10.1109/TED.2007.913007

A 6,13-bis(Triisopropylsilylethynyl) pentacene thin-film transistor using a spun-on inorganic gate-dielectric

Jae Hong Kwon, Jung Hoon Seo, Sang Il Shin, Kyung Hwan Kim, Dong Hoon Choi, In Byeong Kang, Hochul Kang, Byeong Kwon Ju

Research output: Contribution to journal › Article › peer-review

38 Citations (Scopus)

Abstract

We present the latest results of the use of soluble materials such as organic semiconductors (OSCs) or gate-dielectrics for simplified processing of organic thin-film transistors (OTFTs). In this paper, we described our fabrication of a solution-processed OTFT with 6,13-bis(Triisopropylsilylethynyl) pentacene (TIPS-pentacene) as the OSC and siloxane-based spin-on glass (SOG) as the inorganic gate-dielectric. Also, synthesized TIPS-pentacene and SOG were examined for use as the OSC and gate-dielectric in an OTFT. From electrical measurements, we obtained device performance characteristics such as charge carrier mobility, threshold voltage, current on/off ratio, and subthreshold swing, which were 6.48 × 10^-3 cm²/V · s,-13 V, ∼100, and 1.83 V/dec, respectively.

Original language	English
Pages (from-to)	500-505
Number of pages	6
Journal	IEEE Transactions on Electron Devices
Volume	55
Issue number	2
DOIs	https://doi.org/10.1109/TED.2007.913007
Publication status	Published - 2008 Feb

Keywords

6,13-bis(Triisopropylsilylethynyl) pentacene (TIPS-pentacene)
Organic electronics
Organic thin-film transistor (OTFT)
Spin-on glass

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/TED.2007.913007

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title = "A 6,13-bis(Triisopropylsilylethynyl) pentacene thin-film transistor using a spun-on inorganic gate-dielectric",

abstract = "We present the latest results of the use of soluble materials such as organic semiconductors (OSCs) or gate-dielectrics for simplified processing of organic thin-film transistors (OTFTs). In this paper, we described our fabrication of a solution-processed OTFT with 6,13-bis(Triisopropylsilylethynyl) pentacene (TIPS-pentacene) as the OSC and siloxane-based spin-on glass (SOG) as the inorganic gate-dielectric. Also, synthesized TIPS-pentacene and SOG were examined for use as the OSC and gate-dielectric in an OTFT. From electrical measurements, we obtained device performance characteristics such as charge carrier mobility, threshold voltage, current on/off ratio, and subthreshold swing, which were 6.48 × 10-3 cm2/V · s,-13 V, ∼100, and 1.83 V/dec, respectively.",

keywords = "6,13-bis(Triisopropylsilylethynyl) pentacene (TIPS-pentacene), Organic electronics, Organic thin-film transistor (OTFT), Spin-on glass",

author = "Kwon, {Jae Hong} and Seo, {Jung Hoon} and Shin, {Sang Il} and Kim, {Kyung Hwan} and Choi, {Dong Hoon} and Kang, {In Byeong} and Hochul Kang and Ju, {Byeong Kwon}",

note = "Funding Information: Manuscript received June 8, 2007; revised October 22, 2007. This work was supported in part by the Industrial-Educational Cooperation Program between Korea University and LG. Philips LCD, in part by the National Research Laboratory under Grant NRL, R0 A-2007-000-20111-0 Program of the Ministry of Science and Technology (Korea Science and Engineering Foundation), and in part by the second stage of the Brain Korea 21 Project in 2007 (Korea Research Foundation). The review of this paper was arranged by Editor J. Kanicki.",

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doi = "10.1109/TED.2007.913007",

language = "English",

volume = "55",

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publisher = "Institute of Electrical and Electronics Engineers Inc.",

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AU - Kwon, Jae Hong

AU - Seo, Jung Hoon

AU - Shin, Sang Il

AU - Kim, Kyung Hwan

AU - Choi, Dong Hoon

AU - Kang, In Byeong

AU - Kang, Hochul

AU - Ju, Byeong Kwon

N1 - Funding Information: Manuscript received June 8, 2007; revised October 22, 2007. This work was supported in part by the Industrial-Educational Cooperation Program between Korea University and LG. Philips LCD, in part by the National Research Laboratory under Grant NRL, R0 A-2007-000-20111-0 Program of the Ministry of Science and Technology (Korea Science and Engineering Foundation), and in part by the second stage of the Brain Korea 21 Project in 2007 (Korea Research Foundation). The review of this paper was arranged by Editor J. Kanicki.

PY - 2008/2

Y1 - 2008/2

N2 - We present the latest results of the use of soluble materials such as organic semiconductors (OSCs) or gate-dielectrics for simplified processing of organic thin-film transistors (OTFTs). In this paper, we described our fabrication of a solution-processed OTFT with 6,13-bis(Triisopropylsilylethynyl) pentacene (TIPS-pentacene) as the OSC and siloxane-based spin-on glass (SOG) as the inorganic gate-dielectric. Also, synthesized TIPS-pentacene and SOG were examined for use as the OSC and gate-dielectric in an OTFT. From electrical measurements, we obtained device performance characteristics such as charge carrier mobility, threshold voltage, current on/off ratio, and subthreshold swing, which were 6.48 × 10-3 cm2/V · s,-13 V, ∼100, and 1.83 V/dec, respectively.

AB - We present the latest results of the use of soluble materials such as organic semiconductors (OSCs) or gate-dielectrics for simplified processing of organic thin-film transistors (OTFTs). In this paper, we described our fabrication of a solution-processed OTFT with 6,13-bis(Triisopropylsilylethynyl) pentacene (TIPS-pentacene) as the OSC and siloxane-based spin-on glass (SOG) as the inorganic gate-dielectric. Also, synthesized TIPS-pentacene and SOG were examined for use as the OSC and gate-dielectric in an OTFT. From electrical measurements, we obtained device performance characteristics such as charge carrier mobility, threshold voltage, current on/off ratio, and subthreshold swing, which were 6.48 × 10-3 cm2/V · s,-13 V, ∼100, and 1.83 V/dec, respectively.

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A 6,13-bis(Triisopropylsilylethynyl) pentacene thin-film transistor using a spun-on inorganic gate-dielectric

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