A 700 GHz Integrated Signal Source Based on 130 nm InP HBT Technology

Heekang Son; Junghwan Yoo; Doyoon Kim; Jae Sung Rieh

doi:10.1109/TTHZ.2023.3319607

A 700 GHz Integrated Signal Source Based on 130 nm InP HBT Technology

Heekang Son, Junghwan Yoo, Doyoon Kim, Jae Sung Rieh

Research output: Contribution to journal › Article › peer-review

Abstract

A 700 GHz integrated signal source has been developed in this work based on a 130 nm InP heterojunction bipolar transistor technology. The circuit consists of a differential 350 GHz oscillator integrated with a frequency doubler. For the oscillator, the common-base cross-coupled topology was employed, while balanced common-emitter structure was adopted for the frequency doubler. The fabricated signal source exhibited a measured output frequency around 700 GHz, with a tight frequency variation over oscillator bias current change (702.3–698.8 GHz). The circuit also showed a measured peak output power of −11.8 dBm and dc-to-RF efficiency at peak output power of 0.09%. The phase noise was measured to be −73.8 dBc/Hz at 10 MHz offset frequency. The total dc power dissipation was 74.4 mW.

Original language	English
Pages (from-to)	654-658
Number of pages	5
Journal	IEEE Transactions on Terahertz Science and Technology
Volume	13
Issue number	6
DOIs	https://doi.org/10.1109/TTHZ.2023.3319607
Publication status	Published - 2023 Nov 1

Bibliographical note

Publisher Copyright:
© 2023 IEEE. Personal use is permitted, but republication/redistribution requires IEEE permission.

Keywords

Harmonic generation
heterojunction bipolar transistors (HBTs)
oscillators

ASJC Scopus subject areas

Radiation
Electrical and Electronic Engineering

Access to Document

10.1109/TTHZ.2023.3319607

Cite this

@article{8fb5fca023bd49ea9369d1a5bf079417,

title = "A 700 GHz Integrated Signal Source Based on 130 nm InP HBT Technology",

abstract = "A 700 GHz integrated signal source has been developed in this work based on a 130 nm InP heterojunction bipolar transistor technology. The circuit consists of a differential 350 GHz oscillator integrated with a frequency doubler. For the oscillator, the common-base cross-coupled topology was employed, while balanced common-emitter structure was adopted for the frequency doubler. The fabricated signal source exhibited a measured output frequency around 700 GHz, with a tight frequency variation over oscillator bias current change (702.3–698.8 GHz). The circuit also showed a measured peak output power of −11.8 dBm and dc-to-RF efficiency at peak output power of 0.09%. The phase noise was measured to be −73.8 dBc/Hz at 10 MHz offset frequency. The total dc power dissipation was 74.4 mW.",

keywords = "Harmonic generation, heterojunction bipolar transistors (HBTs), oscillators",

author = "Heekang Son and Junghwan Yoo and Doyoon Kim and Rieh, {Jae Sung}",

note = "Publisher Copyright: {\textcopyright} 2023 IEEE. Personal use is permitted, but republication/redistribution requires IEEE permission.",

year = "2023",

month = nov,

day = "1",

doi = "10.1109/TTHZ.2023.3319607",

language = "English",

volume = "13",

pages = "654--658",

journal = "IEEE Transactions on Terahertz Science and Technology",

issn = "2156-342X",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "6",

}

TY - JOUR

T1 - A 700 GHz Integrated Signal Source Based on 130 nm InP HBT Technology

AU - Son, Heekang

AU - Yoo, Junghwan

AU - Kim, Doyoon

AU - Rieh, Jae Sung

PY - 2023/11/1

Y1 - 2023/11/1

N2 - A 700 GHz integrated signal source has been developed in this work based on a 130 nm InP heterojunction bipolar transistor technology. The circuit consists of a differential 350 GHz oscillator integrated with a frequency doubler. For the oscillator, the common-base cross-coupled topology was employed, while balanced common-emitter structure was adopted for the frequency doubler. The fabricated signal source exhibited a measured output frequency around 700 GHz, with a tight frequency variation over oscillator bias current change (702.3–698.8 GHz). The circuit also showed a measured peak output power of −11.8 dBm and dc-to-RF efficiency at peak output power of 0.09%. The phase noise was measured to be −73.8 dBc/Hz at 10 MHz offset frequency. The total dc power dissipation was 74.4 mW.

AB - A 700 GHz integrated signal source has been developed in this work based on a 130 nm InP heterojunction bipolar transistor technology. The circuit consists of a differential 350 GHz oscillator integrated with a frequency doubler. For the oscillator, the common-base cross-coupled topology was employed, while balanced common-emitter structure was adopted for the frequency doubler. The fabricated signal source exhibited a measured output frequency around 700 GHz, with a tight frequency variation over oscillator bias current change (702.3–698.8 GHz). The circuit also showed a measured peak output power of −11.8 dBm and dc-to-RF efficiency at peak output power of 0.09%. The phase noise was measured to be −73.8 dBc/Hz at 10 MHz offset frequency. The total dc power dissipation was 74.4 mW.

KW - Harmonic generation

KW - heterojunction bipolar transistors (HBTs)

KW - oscillators

UR - http://www.scopus.com/inward/record.url?scp=85173374530&partnerID=8YFLogxK

U2 - 10.1109/TTHZ.2023.3319607

DO - 10.1109/TTHZ.2023.3319607

M3 - Article

AN - SCOPUS:85173374530

SN - 2156-342X

VL - 13

SP - 654

EP - 658

JO - IEEE Transactions on Terahertz Science and Technology

JF - IEEE Transactions on Terahertz Science and Technology

IS - 6

ER -

A 700 GHz Integrated Signal Source Based on 130 nm InP HBT Technology

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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