A 700 GHz Integrated Signal Source Based on 130 nm InP HBT Technology

Heekang Son; Junghwan Yoo; Doyoon Kim; Jae Sung Rieh

doi:10.1109/TTHZ.2023.3319607

A 700 GHz Integrated Signal Source Based on 130 nm InP HBT Technology

Heekang Son, Junghwan Yoo, Doyoon Kim, Jae Sung Rieh

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

A 700 GHz integrated signal source has been developed in this work based on a 130 nm InP heterojunction bipolar transistor technology. The circuit consists of a differential 350 GHz oscillator integrated with a frequency doubler. For the oscillator, the common-base cross-coupled topology was employed, while balanced common-emitter structure was adopted for the frequency doubler. The fabricated signal source exhibited a measured output frequency around 700 GHz, with a tight frequency variation over oscillator bias current change (702.3–698.8 GHz). The circuit also showed a measured peak output power of −11.8 dBm and dc-to-RF efficiency at peak output power of 0.09%. The phase noise was measured to be −73.8 dBc/Hz at 10 MHz offset frequency. The total dc power dissipation was 74.4 mW.

Original language	English
Pages (from-to)	654-658
Number of pages	5
Journal	IEEE Transactions on Terahertz Science and Technology
Volume	13
Issue number	6
DOIs	https://doi.org/10.1109/TTHZ.2023.3319607
Publication status	Published - 2023 Nov 1

Bibliographical note

Publisher Copyright:
© 2023 IEEE. Personal use is permitted, but republication/redistribution requires IEEE permission.

Keywords

Harmonic generation
heterojunction bipolar transistors (HBTs)
oscillators

ASJC Scopus subject areas

Radiation
Electrical and Electronic Engineering

Access to Document

10.1109/TTHZ.2023.3319607

Cite this

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title = "A 700 GHz Integrated Signal Source Based on 130 nm InP HBT Technology",

abstract = "A 700 GHz integrated signal source has been developed in this work based on a 130 nm InP heterojunction bipolar transistor technology. The circuit consists of a differential 350 GHz oscillator integrated with a frequency doubler. For the oscillator, the common-base cross-coupled topology was employed, while balanced common-emitter structure was adopted for the frequency doubler. The fabricated signal source exhibited a measured output frequency around 700 GHz, with a tight frequency variation over oscillator bias current change (702.3–698.8 GHz). The circuit also showed a measured peak output power of −11.8 dBm and dc-to-RF efficiency at peak output power of 0.09%. The phase noise was measured to be −73.8 dBc/Hz at 10 MHz offset frequency. The total dc power dissipation was 74.4 mW.",

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AU - Yoo, Junghwan

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AU - Rieh, Jae Sung

PY - 2023/11/1

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A 700 GHz Integrated Signal Source Based on 130 nm InP HBT Technology

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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