A 90-GHz High DC-To-RF Efficiency VCO with Multi-Way Transformers in 65-nm CMOS

Junghwan Yoo; Heekang Son; Jungsoo Kim; Doyoon Kim; Jae Sung Rieh

doi:10.1109/RFIT49453.2020.9226213

A 90-GHz High DC-To-RF Efficiency VCO with Multi-Way Transformers in 65-nm CMOS

Junghwan Yoo, Heekang Son, Jungsoo Kim, Doyoon Kim, Jae Sung Rieh

School of Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

This paper presents a high efficiency gate inductive feedback Colpitts Voltage Controlled Oscillator (VCO) operating near 90 GHz. It includes multi-way transformers at the load, which helps to enhance the DC-To-RF efficiency with boosted impedance and extended voltage swing through drain-buffer and drain-source magnetic couplings. The proposed VCO is fabricated in a 65-nm CMOS process, and showed an oscillation frequency tuning range of 87.5-92.0 GHz (4.5 GHz). Over the frequency range, the output power and the dc power consumption exhibited values of-2.8-1.7 dBm and 6-22.5 mW, respectively. The peak DC-To-RF efficiency was 9.4 %, and the corresponding phase noise was-107.4 dBc/Hz at 10-MHz offset. The lowest phase noise at the optimum bias condition was-116.7 dB/Hz at 10-MHz offset. The chip size is 400 300 μm2 excluding DC and RF pads.

Original language	English
Title of host publication	2020 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2020
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	25-27
Number of pages	3
ISBN (Electronic)	9781728165066
DOIs	https://doi.org/10.1109/RFIT49453.2020.9226213
Publication status	Published - 2020 Sept
Event	2020 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2020 - Hiroshima, Japan Duration: 2020 Sept 2 → 2020 Sept 4

Publication series

Name	2020 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2020

Conference

Conference	2020 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2020
Country/Territory	Japan
City	Hiroshima
Period	20/9/2 → 20/9/4

Bibliographical note

Funding Information:
This work was supported by Samsung Electronics Co., Ltd. and Institute of Information & Communications Technology Planning & Evaluation (IITP) grant funded by the Korea government (MSIT) (No. 2016-0-00185).

Publisher Copyright:
© 2020 IEEE.

Keywords

CMOS technology
DC-To-RF efficiency
phase noise
voltage-controlled oscillators

ASJC Scopus subject areas

Computer Networks and Communications
Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Instrumentation
Radiation

Access to Document

10.1109/RFIT49453.2020.9226213

Cite this

Yoo, J., Son, H., Kim, J., Kim, D., & Rieh, J. S. (2020). A 90-GHz High DC-To-RF Efficiency VCO with Multi-Way Transformers in 65-nm CMOS. In 2020 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2020 (pp. 25-27). Article 9226213 (2020 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2020). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/RFIT49453.2020.9226213

A 90-GHz High DC-To-RF Efficiency VCO with Multi-Way Transformers in 65-nm CMOS. / Yoo, Junghwan; Son, Heekang; Kim, Jungsoo et al.
2020 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2020. Institute of Electrical and Electronics Engineers Inc., 2020. p. 25-27 9226213 (2020 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2020).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Yoo, J, Son, H, Kim, J, Kim, D & Rieh, JS 2020, A 90-GHz High DC-To-RF Efficiency VCO with Multi-Way Transformers in 65-nm CMOS. in 2020 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2020., 9226213, 2020 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2020, Institute of Electrical and Electronics Engineers Inc., pp. 25-27, 2020 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2020, Hiroshima, Japan, 20/9/2. https://doi.org/10.1109/RFIT49453.2020.9226213

Yoo J, Son H, Kim J, Kim D, Rieh JS. A 90-GHz High DC-To-RF Efficiency VCO with Multi-Way Transformers in 65-nm CMOS. In 2020 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2020. Institute of Electrical and Electronics Engineers Inc. 2020. p. 25-27. 9226213. (2020 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2020). doi: 10.1109/RFIT49453.2020.9226213

Yoo, Junghwan ; Son, Heekang ; Kim, Jungsoo et al. / A 90-GHz High DC-To-RF Efficiency VCO with Multi-Way Transformers in 65-nm CMOS. 2020 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2020. Institute of Electrical and Electronics Engineers Inc., 2020. pp. 25-27 (2020 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2020).

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abstract = "This paper presents a high efficiency gate inductive feedback Colpitts Voltage Controlled Oscillator (VCO) operating near 90 GHz. It includes multi-way transformers at the load, which helps to enhance the DC-To-RF efficiency with boosted impedance and extended voltage swing through drain-buffer and drain-source magnetic couplings. The proposed VCO is fabricated in a 65-nm CMOS process, and showed an oscillation frequency tuning range of 87.5-92.0 GHz (4.5 GHz). Over the frequency range, the output power and the dc power consumption exhibited values of-2.8-1.7 dBm and 6-22.5 mW, respectively. The peak DC-To-RF efficiency was 9.4 %, and the corresponding phase noise was-107.4 dBc/Hz at 10-MHz offset. The lowest phase noise at the optimum bias condition was-116.7 dB/Hz at 10-MHz offset. The chip size is 400 300 μm2 excluding DC and RF pads. ",

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AB - This paper presents a high efficiency gate inductive feedback Colpitts Voltage Controlled Oscillator (VCO) operating near 90 GHz. It includes multi-way transformers at the load, which helps to enhance the DC-To-RF efficiency with boosted impedance and extended voltage swing through drain-buffer and drain-source magnetic couplings. The proposed VCO is fabricated in a 65-nm CMOS process, and showed an oscillation frequency tuning range of 87.5-92.0 GHz (4.5 GHz). Over the frequency range, the output power and the dc power consumption exhibited values of-2.8-1.7 dBm and 6-22.5 mW, respectively. The peak DC-To-RF efficiency was 9.4 %, and the corresponding phase noise was-107.4 dBc/Hz at 10-MHz offset. The lowest phase noise at the optimum bias condition was-116.7 dB/Hz at 10-MHz offset. The chip size is 400 300 μm2 excluding DC and RF pads.

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A 90-GHz High DC-To-RF Efficiency VCO with Multi-Way Transformers in 65-nm CMOS

Abstract

Publication series

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Bibliographical note

Keywords

ASJC Scopus subject areas

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