A CMOS 180-GHz signal source with an integrated frequency doubler

Jungsoo Kim, Myeong Gyo Seo, Jae Sung Rieh

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

A 180-GHz signal source based on a 65-nm CMOS technology has been developed in this study. The 180-GHz signal source consists of a 90-GHz fundamental-mode Colpitts oscillator and a 180-GHz frequency doubler. A coupled-line is employed to couple two oscillator cores for generating a differential signal, which is delivered to the input of the differential-mode doubler. The fabricated signal source operates from 181.2 to 182.4 GHz with output power varying from -15.3 to -10.8 dBm. The peak output power was -10.53 dBm at 181.3 GHz with a DC power consumption of 42 mW, and the associated phase noise was -71 dBc/Hz at 1 MHz offset.

Original languageEnglish
Pages (from-to)229-231
Number of pages3
JournalJournal of Electromagnetic Engineering and Science
Volume16
Issue number4
DOIs
Publication statusPublished - 2016

Bibliographical note

Funding Information:
This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIP) (NRF-2015R1A2A1A05001836).

Publisher Copyright:
© The Korean Institute of Electromagnetic Engineering and Science. All Rights Reserved.

Keywords

  • CMOS
  • Colpitts
  • Frequency doubler
  • Oscillator
  • Signal source

ASJC Scopus subject areas

  • Radiation
  • Instrumentation
  • Computer Networks and Communications
  • Electrical and Electronic Engineering

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