Abstract
In this work, a 300-GHz 7×7 imaging detector array has been developed with a 65-nm CMOS technology. Each pixel is made of an identical 300-GHz common-gate differential direct detector integrated with a patch antenna. The detector exhibits a 1,200 V/W responsivity and a 20 pW/Hz05 NEP by simulation. The fabricated chip area is 4×4 mm2 including wire-bonding pads. Employing the fabricated 7×7 detector array as a detector, real-time reflection imaging at 300 GHz was successfully carried out.
Original language | English |
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Title of host publication | 2017 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2017 |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
Pages | 31-33 |
Number of pages | 3 |
ISBN (Electronic) | 9781509040360 |
DOIs | |
Publication status | Published - 2017 Sept 20 |
Event | 2017 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2017 - Seoul, Korea, Republic of Duration: 2017 Aug 30 → 2017 Sept 1 |
Publication series
Name | 2017 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2017 |
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Other
Other | 2017 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2017 |
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Country/Territory | Korea, Republic of |
City | Seoul |
Period | 17/8/30 → 17/9/1 |
Bibliographical note
Publisher Copyright:© 2017 IEEE.
Keywords
- CMOS
- detector array
- reflection imaging
- terahertz
ASJC Scopus subject areas
- Computer Networks and Communications
- Electrical and Electronic Engineering
- Instrumentation