A CMOS 300-GHz 7 by 7 detector array for THz imaging

Kiryong Song; Jungsoo Kim; Doyoon Kim; Myeong Gyo Seo; Jae Sung Rieh

doi:10.1109/RFIT.2017.8048280

A CMOS 300-GHz 7 by 7 detector array for THz imaging

Kiryong Song
, Jungsoo Kim
, Doyoon Kim
, Myeong Gyo Seo
, Jae Sung Rieh

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

8 Citations (Scopus)

Abstract

In this work, a 300-GHz 7×7 imaging detector array has been developed with a 65-nm CMOS technology. Each pixel is made of an identical 300-GHz common-gate differential direct detector integrated with a patch antenna. The detector exhibits a 1,200 V/W responsivity and a 20 pW/Hz⁰⁵ NEP by simulation. The fabricated chip area is 4×4 mm² including wire-bonding pads. Employing the fabricated 7×7 detector array as a detector, real-time reflection imaging at 300 GHz was successfully carried out.

Original language	English
Title of host publication	2017 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2017
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	31-33
Number of pages	3
ISBN (Electronic)	9781509040360
DOIs	https://doi.org/10.1109/RFIT.2017.8048280
Publication status	Published - 2017 Sept 20
Event	2017 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2017 - Seoul, Korea, Republic of Duration: 2017 Aug 30 → 2017 Sept 1

Publication series

Name	2017 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2017

Other

Other	2017 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2017
Country/Territory	Korea, Republic of
City	Seoul
Period	17/8/30 → 17/9/1

Bibliographical note

Publisher Copyright:
© 2017 IEEE.

Keywords

CMOS
detector array
reflection imaging
terahertz

ASJC Scopus subject areas

Computer Networks and Communications
Electrical and Electronic Engineering
Instrumentation

Access to Document

10.1109/RFIT.2017.8048280

Cite this

Song, K., Kim, J., Kim, D., Seo, M. G., & Rieh, J. S. (2017). A CMOS 300-GHz 7 by 7 detector array for THz imaging. In 2017 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2017 (pp. 31-33). Article 8048280 (2017 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2017). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/RFIT.2017.8048280

A CMOS 300-GHz 7 by 7 detector array for THz imaging. / Song, Kiryong; Kim, Jungsoo; Kim, Doyoon et al.
2017 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2017. Institute of Electrical and Electronics Engineers Inc., 2017. p. 31-33 8048280 (2017 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2017).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Song, K, Kim, J, Kim, D, Seo, MG & Rieh, JS 2017, A CMOS 300-GHz 7 by 7 detector array for THz imaging. in 2017 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2017., 8048280, 2017 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2017, Institute of Electrical and Electronics Engineers Inc., pp. 31-33, 2017 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2017, Seoul, Korea, Republic of, 17/8/30. https://doi.org/10.1109/RFIT.2017.8048280

Song K, Kim J, Kim D, Seo MG, Rieh JS. A CMOS 300-GHz 7 by 7 detector array for THz imaging. In 2017 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2017. Institute of Electrical and Electronics Engineers Inc. 2017. p. 31-33. 8048280. (2017 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2017). doi: 10.1109/RFIT.2017.8048280

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abstract = "In this work, a 300-GHz 7×7 imaging detector array has been developed with a 65-nm CMOS technology. Each pixel is made of an identical 300-GHz common-gate differential direct detector integrated with a patch antenna. The detector exhibits a 1,200 V/W responsivity and a 20 pW/Hz05 NEP by simulation. The fabricated chip area is 4×4 mm2 including wire-bonding pads. Employing the fabricated 7×7 detector array as a detector, real-time reflection imaging at 300 GHz was successfully carried out.",

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A CMOS 300-GHz 7 by 7 detector array for THz imaging

Abstract

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Bibliographical note

Keywords

ASJC Scopus subject areas

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