A CMOS 300-GHz Injection-Locked Frequency Tripler With a Tri-Layer Dual Coupled Line for Improved Locking Range

Sooyeon Kim; Daekeun Yoon; Jungsoo Kim; Junghwan Yoo; Kiryong Song; Jae Sung Rieh

doi:10.1109/TCSII.2021.3103736

A CMOS 300-GHz Injection-Locked Frequency Tripler With a Tri-Layer Dual Coupled Line for Improved Locking Range

Sooyeon Kim, Daekeun Yoon, Jungsoo Kim, Junghwan Yoo, Kiryong Song, Jae Sung Rieh

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

A triple-push sub-harmonic injection-locked ring tripler is presented in this brief. The circuit converts a 100-GHz injection signal to an output signal of around 300 GHz. The circuit employs a tri-layer dual coupled line, which is composed of three layers of metal stack. The signal injection through the tri-layer dual coupled line structure disturbs the symmetry in the injection-locked ring tripler, leading to a locking range enhancement. The circuit, fabricated in a 65-nm CMOS process, achieved a locking range of up to 24 GHz with a 3-dBm injection power. A measured output power larger than -18 dBm was obtained at the free-running frequency of 302 GHz. The measured phase noise was -105 dBc/Hz at 1-MHz offset.

Original language	English
Pages (from-to)	309-313
Number of pages	5
Journal	IEEE Transactions on Circuits and Systems II: Express Briefs
Volume	69
Issue number	2
DOIs	https://doi.org/10.1109/TCSII.2021.3103736
Publication status	Published - 2022 Feb 1

Bibliographical note

Funding Information:
This work was supported by the National Research Foundation of Korea (NRF) Grant funded by the Korean Government under Grant NRF-2021R1A2C3009096.

Publisher Copyright:
© 2021 IEEE.

Keywords

Couplings
Harmonic analysis
Impedance
Metals
Oscillators
Power generation
Ring oscillators

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1109/TCSII.2021.3103736

Cite this

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title = "A CMOS 300-GHz Injection-Locked Frequency Tripler With a Tri-Layer Dual Coupled Line for Improved Locking Range",

abstract = "A triple-push sub-harmonic injection-locked ring tripler is presented in this brief. The circuit converts a 100-GHz injection signal to an output signal of around 300 GHz. The circuit employs a tri-layer dual coupled line, which is composed of three layers of metal stack. The signal injection through the tri-layer dual coupled line structure disturbs the symmetry in the injection-locked ring tripler, leading to a locking range enhancement. The circuit, fabricated in a 65-nm CMOS process, achieved a locking range of up to 24 GHz with a 3-dBm injection power. A measured output power larger than -18 dBm was obtained at the free-running frequency of 302 GHz. The measured phase noise was -105 dBc/Hz at 1-MHz offset.",

keywords = "Couplings, Harmonic analysis, Impedance, Metals, Oscillators, Power generation, Ring oscillators",

author = "Sooyeon Kim and Daekeun Yoon and Jungsoo Kim and Junghwan Yoo and Kiryong Song and Rieh, {Jae Sung}",

note = "Funding Information: This work was supported by the National Research Foundation of Korea (NRF) Grant funded by the Korean Government under Grant NRF-2021R1A2C3009096. Publisher Copyright: {\textcopyright} 2021 IEEE.",

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AU - Yoon, Daekeun

AU - Kim, Jungsoo

AU - Yoo, Junghwan

AU - Song, Kiryong

AU - Rieh, Jae Sung

N1 - Funding Information: This work was supported by the National Research Foundation of Korea (NRF) Grant funded by the Korean Government under Grant NRF-2021R1A2C3009096. Publisher Copyright: © 2021 IEEE.

PY - 2022/2/1

Y1 - 2022/2/1

N2 - A triple-push sub-harmonic injection-locked ring tripler is presented in this brief. The circuit converts a 100-GHz injection signal to an output signal of around 300 GHz. The circuit employs a tri-layer dual coupled line, which is composed of three layers of metal stack. The signal injection through the tri-layer dual coupled line structure disturbs the symmetry in the injection-locked ring tripler, leading to a locking range enhancement. The circuit, fabricated in a 65-nm CMOS process, achieved a locking range of up to 24 GHz with a 3-dBm injection power. A measured output power larger than -18 dBm was obtained at the free-running frequency of 302 GHz. The measured phase noise was -105 dBc/Hz at 1-MHz offset.

AB - A triple-push sub-harmonic injection-locked ring tripler is presented in this brief. The circuit converts a 100-GHz injection signal to an output signal of around 300 GHz. The circuit employs a tri-layer dual coupled line, which is composed of three layers of metal stack. The signal injection through the tri-layer dual coupled line structure disturbs the symmetry in the injection-locked ring tripler, leading to a locking range enhancement. The circuit, fabricated in a 65-nm CMOS process, achieved a locking range of up to 24 GHz with a 3-dBm injection power. A measured output power larger than -18 dBm was obtained at the free-running frequency of 302 GHz. The measured phase noise was -105 dBc/Hz at 1-MHz offset.

KW - Couplings

KW - Harmonic analysis

KW - Impedance

KW - Metals

KW - Oscillators

KW - Power generation

KW - Ring oscillators

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A CMOS 300-GHz Injection-Locked Frequency Tripler With a Tri-Layer Dual Coupled Line for Improved Locking Range

Abstract

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Keywords

ASJC Scopus subject areas

Access to Document

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