Abstract
A CMOS TDC-based digital magnetic Mall sensor using the self temperature compensation schemes is proposed. The proposed sensor consists of the sensor device, its bias and signal-processing circuit which is fully compatible with a standard CMOS technology. For the high magnetic sensitivity, the MAGFET is implemented with proper geometric parameters. The TDC-based digital circuit is proposed for the low power consumption and easy design. The self temperature compensation schemes of mobility and threshold voltage temperature effects are utilized for the low temperature variation. The proposed sensor is implemented with a standard 0.18μm CMOS technology and shows the good detectable resolution by 0.8μT under magnetic fields ranging from 0 to 0.8T and temperature variations by 250nT ranging from -40°C to +80°C. And the very low power consumption by 36μnW at 1.8V supply voltage is measured.
| Original language | English |
|---|---|
| Article number | 4672088 |
| Pages (from-to) | 329-332 |
| Number of pages | 4 |
| Journal | Proceedings of the Custom Integrated Circuits Conference |
| DOIs | |
| Publication status | Published - 2008 |
| Event | IEEE 2008 Custom Integrated Circuits Conference, CICC 2008 - San Jose, CA, United States Duration: 2008 Sept 21 → 2008 Sept 24 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering