A compact and low-driving-voltage silicon electro-absorption modulator utilizing a Schottky diode operating up to 13.2 GHz in C-band

Uiseok Jeong, Kwangwoong Kim, Kyungwoon Lee, Jung Ho Park

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

This paper demonstrates a 1 Vpp low-driving-voltage silicon electro-absorption modulator (EAM) utilizing a Schottky diode. Optical modulation using a Schottky diode was achieved through the intensity change of the guiding light due to free-carrier absorption in the semiconductor to change its absorption coefficient, not through conventional interference effects. The proposed EAM consists of a lateral metal-semiconductor junction that helps maximize free-carrier injection and extraction through a Schottky contact on rib waveguide. In order to achieve high-speed operation, traveling-wave type electrodes were designed. The fabricated EAM demonstrates a broad operational wavelength range of 50 nm for C-band with a uniform extinction ratio (ER) of 3.9 dB, even for a compact modulation length of 25 μm with a driving voltage of 1 Vpp. Also, the traveling-wave type electrodes enabled the modulator to operate at up to 26 GHz with 13.2 GHz of 3 dB electro-optic bandwidth experimentally.

Original languageEnglish
Article number122001
JournalJapanese journal of applied physics
Volume59
Issue number12
DOIs
Publication statusPublished - 2020 Nov 9

Bibliographical note

Funding Information:
This study was supported by the MSIT (Ministry of Science and ICT), Korea, under the ITRC (Information Technology Research Center) support program (IITP-2019-2015-0- 00385), supervised by the IITP (Institute for Information & communications Technology Planning & Evaluation). It was also supported by the Seoul R&BD Program (WR080951).

Publisher Copyright:
© 2020 The Japan Society of Applied Physics.

ASJC Scopus subject areas

  • General Engineering
  • General Physics and Astronomy

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