A comparative study of solution based CIGS thin film growth on different glass substrates

Se Jin Park; Eunjoo Lee; Hyo Sang Jeon; Se Jin Ahn; Min Kyu Oh; Byoung Koun Min

doi:10.1016/j.apsusc.2011.08.016

A comparative study of solution based CIGS thin film growth on different glass substrates

Se Jin Park, Eunjoo Lee, Hyo Sang Jeon, Se Jin Ahn, Min Kyu Oh, Byoung Koun Min

Research output: Contribution to journal › Article › peer-review

18 Citations (Scopus)

Abstract

CuIn _x Ga _1-x Se _y S _2-y (CIGS) thin films were synthesized on glass substrates by a paste coating of Cu, In, and Ga precursor solution with a three-step heat treatment process: oxidation, sulfurization, and selenization. In particular, morphological changes of CIGS films for each heat treatment step were investigated with respect to the kinds of glass substrates: bare, Mo-coated, and F-doped SnO ₂ (FTO) soda-lime glasses. Very high quality CIGS film with large grains and low degree of porosity was obtained on the bare glass substrate. Similar morphology of CIGS film was also acquired on the Mo-coated glass except the formation of an undesired Mo oxide interfacial layer due to the partial oxidation of Mo layer during the first heat treatment under ambient conditions. On the other hand, CIGS film with much smaller grains and higher degree of porosity was gained when FTO glass was used as a substrate, resulting in slight solar to electricity conversion behavior (0.20%). Higher power conversion efficiency (1.32%) was attained by the device with the CIGS film grown on Mo-coated glass in spite of the presence of a Mo oxide impurity layer.

Original language	English
Pages (from-to)	120-125
Number of pages	6
Journal	Applied Surface Science
Volume	258
Issue number	1
DOIs	https://doi.org/10.1016/j.apsusc.2011.08.016
Publication status	Published - 2011 Oct 15

Bibliographical note

Funding Information:
This work was supported by the Converging Research Center Program through the National Research Foundation of Korea (NRF-2011-K000580) and the National Research Foundation of Korea Grant (NRF-2009-C1AAA001-0092935) funded by the Ministry of Education, Science, and Technology. Also, the authors thank the program of the Korea Institute of Science & Technology (KIST).

Keywords

CIGS
Solar cells
Solution processes
Substrates

ASJC Scopus subject areas

General Chemistry
Condensed Matter Physics
General Physics and Astronomy
Surfaces and Interfaces
Surfaces, Coatings and Films

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10.1016/j.apsusc.2011.08.016

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title = "A comparative study of solution based CIGS thin film growth on different glass substrates",

abstract = " CuIn x Ga 1-x Se y S 2-y (CIGS) thin films were synthesized on glass substrates by a paste coating of Cu, In, and Ga precursor solution with a three-step heat treatment process: oxidation, sulfurization, and selenization. In particular, morphological changes of CIGS films for each heat treatment step were investigated with respect to the kinds of glass substrates: bare, Mo-coated, and F-doped SnO 2 (FTO) soda-lime glasses. Very high quality CIGS film with large grains and low degree of porosity was obtained on the bare glass substrate. Similar morphology of CIGS film was also acquired on the Mo-coated glass except the formation of an undesired Mo oxide interfacial layer due to the partial oxidation of Mo layer during the first heat treatment under ambient conditions. On the other hand, CIGS film with much smaller grains and higher degree of porosity was gained when FTO glass was used as a substrate, resulting in slight solar to electricity conversion behavior (0.20%). Higher power conversion efficiency (1.32%) was attained by the device with the CIGS film grown on Mo-coated glass in spite of the presence of a Mo oxide impurity layer.",

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author = "Park, {Se Jin} and Eunjoo Lee and Jeon, {Hyo Sang} and Ahn, {Se Jin} and Oh, {Min Kyu} and Min, {Byoung Koun}",

note = "Funding Information: This work was supported by the Converging Research Center Program through the National Research Foundation of Korea (NRF-2011-K000580) and the National Research Foundation of Korea Grant (NRF-2009-C1AAA001-0092935) funded by the Ministry of Education, Science, and Technology. Also, the authors thank the program of the Korea Institute of Science & Technology (KIST).",

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AU - Lee, Eunjoo

AU - Jeon, Hyo Sang

AU - Ahn, Se Jin

AU - Oh, Min Kyu

AU - Min, Byoung Koun

N1 - Funding Information: This work was supported by the Converging Research Center Program through the National Research Foundation of Korea (NRF-2011-K000580) and the National Research Foundation of Korea Grant (NRF-2009-C1AAA001-0092935) funded by the Ministry of Education, Science, and Technology. Also, the authors thank the program of the Korea Institute of Science & Technology (KIST).

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N2 - CuIn x Ga 1-x Se y S 2-y (CIGS) thin films were synthesized on glass substrates by a paste coating of Cu, In, and Ga precursor solution with a three-step heat treatment process: oxidation, sulfurization, and selenization. In particular, morphological changes of CIGS films for each heat treatment step were investigated with respect to the kinds of glass substrates: bare, Mo-coated, and F-doped SnO 2 (FTO) soda-lime glasses. Very high quality CIGS film with large grains and low degree of porosity was obtained on the bare glass substrate. Similar morphology of CIGS film was also acquired on the Mo-coated glass except the formation of an undesired Mo oxide interfacial layer due to the partial oxidation of Mo layer during the first heat treatment under ambient conditions. On the other hand, CIGS film with much smaller grains and higher degree of porosity was gained when FTO glass was used as a substrate, resulting in slight solar to electricity conversion behavior (0.20%). Higher power conversion efficiency (1.32%) was attained by the device with the CIGS film grown on Mo-coated glass in spite of the presence of a Mo oxide impurity layer.

AB - CuIn x Ga 1-x Se y S 2-y (CIGS) thin films were synthesized on glass substrates by a paste coating of Cu, In, and Ga precursor solution with a three-step heat treatment process: oxidation, sulfurization, and selenization. In particular, morphological changes of CIGS films for each heat treatment step were investigated with respect to the kinds of glass substrates: bare, Mo-coated, and F-doped SnO 2 (FTO) soda-lime glasses. Very high quality CIGS film with large grains and low degree of porosity was obtained on the bare glass substrate. Similar morphology of CIGS film was also acquired on the Mo-coated glass except the formation of an undesired Mo oxide interfacial layer due to the partial oxidation of Mo layer during the first heat treatment under ambient conditions. On the other hand, CIGS film with much smaller grains and higher degree of porosity was gained when FTO glass was used as a substrate, resulting in slight solar to electricity conversion behavior (0.20%). Higher power conversion efficiency (1.32%) was attained by the device with the CIGS film grown on Mo-coated glass in spite of the presence of a Mo oxide impurity layer.

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A comparative study of solution based CIGS thin film growth on different glass substrates

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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