A comparison study on multilayered barrier oxide structure in charge trap flash for synaptic operation

Minkyung Kim; Eunpyo Park; In Soo Kim; Jongkil Park; Jaewook Kim; Yeonjoo Jeong; Suyoun Lee; Inho Kim; Jong Keuk Park; Tae Yeon Seong; Joon Young Kwak

doi:10.3390/cryst11010070

A comparison study on multilayered barrier oxide structure in charge trap flash for synaptic operation

Minkyung Kim, Eunpyo Park, In Soo Kim, Jongkil Park, Jaewook Kim, Yeonjoo Jeong, Suyoun Lee, Inho Kim, Jong Keuk Park, Tae Yeon Seong, Joon Young Kwak

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

A synaptic device that contains weight information between two neurons is one of the essential components in a neuromorphic system, which needs highly linear and symmetric characteristics of weight update. In this study, a charge trap flash (CTF) memory device with a multilayered high-κ barrier oxide structure on the MoS₂ channel is proposed. The fabricated device was oxide-engineered on the barrier oxide layers to achieve improved synaptic functions. A comparison study between two fabricated devices with different barrier oxide materials (Al₂O₃ and SiO₂ ) suggests that a high-κ barrier oxide structure improves the synaptic operations by demonstrating the increased on/off ratio and symmetry of synaptic weight updates due to a better coupling ratio. Lastly, the fabricated device has demonstrated reliable potentiation and depression behaviors and spike-timing-dependent plasticity (STDP) for use in a spiking neural network (SNN) neuromorphic system.

Original language	English
Article number	70
Pages (from-to)	1-7
Number of pages	7
Journal	Crystals
Volume	11
Issue number	1
DOIs	https://doi.org/10.3390/cryst11010070
Publication status	Published - 2021 Jan

Bibliographical note

Funding Information:
Funding: This work was supported by the Korea Institute of Science and Technology (KIST) (Grant No. 2E30610, 2E30761). The authors acknowledge the National Research Foundation of Korea (NRF-2019M3F3A1A02072175).

Publisher Copyright:
© 2021 by the authors. Licensee MDPI, Basel, Switzerland.

Keywords

Charge trap flash
MoS
Multilayered oxide film
Neuromorphic
Synaptic device

ASJC Scopus subject areas

General Chemical Engineering
General Materials Science
Condensed Matter Physics
Inorganic Chemistry

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10.3390/cryst11010070

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title = "A comparison study on multilayered barrier oxide structure in charge trap flash for synaptic operation",

abstract = "A synaptic device that contains weight information between two neurons is one of the essential components in a neuromorphic system, which needs highly linear and symmetric characteristics of weight update. In this study, a charge trap flash (CTF) memory device with a multilayered high-κ barrier oxide structure on the MoS2 channel is proposed. The fabricated device was oxide-engineered on the barrier oxide layers to achieve improved synaptic functions. A comparison study between two fabricated devices with different barrier oxide materials (Al2O3 and SiO2 ) suggests that a high-κ barrier oxide structure improves the synaptic operations by demonstrating the increased on/off ratio and symmetry of synaptic weight updates due to a better coupling ratio. Lastly, the fabricated device has demonstrated reliable potentiation and depression behaviors and spike-timing-dependent plasticity (STDP) for use in a spiking neural network (SNN) neuromorphic system.",

keywords = "Charge trap flash, MoS, Multilayered oxide film, Neuromorphic, Synaptic device",

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doi = "10.3390/cryst11010070",

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AU - Jeong, Yeonjoo

AU - Lee, Suyoun

AU - Kim, Inho

AU - Park, Jong Keuk

AU - Seong, Tae Yeon

AU - Kwak, Joon Young

N1 - Funding Information: Funding: This work was supported by the Korea Institute of Science and Technology (KIST) (Grant No. 2E30610, 2E30761). The authors acknowledge the National Research Foundation of Korea (NRF-2019M3F3A1A02072175). Publisher Copyright: © 2021 by the authors. Licensee MDPI, Basel, Switzerland.

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N2 - A synaptic device that contains weight information between two neurons is one of the essential components in a neuromorphic system, which needs highly linear and symmetric characteristics of weight update. In this study, a charge trap flash (CTF) memory device with a multilayered high-κ barrier oxide structure on the MoS2 channel is proposed. The fabricated device was oxide-engineered on the barrier oxide layers to achieve improved synaptic functions. A comparison study between two fabricated devices with different barrier oxide materials (Al2O3 and SiO2 ) suggests that a high-κ barrier oxide structure improves the synaptic operations by demonstrating the increased on/off ratio and symmetry of synaptic weight updates due to a better coupling ratio. Lastly, the fabricated device has demonstrated reliable potentiation and depression behaviors and spike-timing-dependent plasticity (STDP) for use in a spiking neural network (SNN) neuromorphic system.

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A comparison study on multilayered barrier oxide structure in charge trap flash for synaptic operation

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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