A comprehensive study of high-Q island-gate varactors (IGVs) for CMOS millimeter-wave applications

Yongho Oh; Jae Sung Rieh

doi:10.1109/TMTT.2011.2117437

A comprehensive study of high-Q island-gate varactors (IGVs) for CMOS millimeter-wave applications

Yongho Oh, Jae Sung Rieh

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

This paper presents a comprehensive study on the high-Q island-gate varactor (IGV), which includes a comparison with the conventional multifinger varactors (MFVs) and analyses on the effect of structural variations on the varactor performance. The study shows that the IGV exhibits smaller R _s and larger Q factor compared to the MFV, while its capacitance tuning ratio is smaller. The effect of the dimension variation and shape of the gate island, as well as the gate thickness, is substantial and the observed trends can be exploited for IGV optimization. This work indicates that the IGV is a highly promising option for millimeter-wave applications.

Original language	English
Article number	5739134
Pages (from-to)	1520-1528
Number of pages	9
Journal	IEEE Transactions on Microwave Theory and Techniques
Volume	59
Issue number	6
DOIs	https://doi.org/10.1109/TMTT.2011.2117437
Publication status	Published - 2011 Jun

Bibliographical note

Funding Information:
Manuscript received January 11, 2011; accepted February 11, 2011. Date of publication March 24, 2011; date of current version June 15, 2011. This work was supported by the National Research Foundation of Korea (NRF) under the Basic Science Research Program funded by the Ministry of Education, Science and Technology (MEST) (2009-0079994).

Keywords

Millimeter wave
Q factor
varactors

ASJC Scopus subject areas

Radiation
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1109/TMTT.2011.2117437

Cite this

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abstract = "This paper presents a comprehensive study on the high-Q island-gate varactor (IGV), which includes a comparison with the conventional multifinger varactors (MFVs) and analyses on the effect of structural variations on the varactor performance. The study shows that the IGV exhibits smaller R s and larger Q factor compared to the MFV, while its capacitance tuning ratio is smaller. The effect of the dimension variation and shape of the gate island, as well as the gate thickness, is substantial and the observed trends can be exploited for IGV optimization. This work indicates that the IGV is a highly promising option for millimeter-wave applications.",

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A comprehensive study of high-Q island-gate varactors (IGVs) for CMOS millimeter-wave applications

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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