A comprehensive study of high-Q island-gate varactors (IGVs) for CMOS millimeter-wave applications

Yongho Oh, Jae Sung Rieh

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)


This paper presents a comprehensive study on the high-Q island-gate varactor (IGV), which includes a comparison with the conventional multifinger varactors (MFVs) and analyses on the effect of structural variations on the varactor performance. The study shows that the IGV exhibits smaller R s and larger Q factor compared to the MFV, while its capacitance tuning ratio is smaller. The effect of the dimension variation and shape of the gate island, as well as the gate thickness, is substantial and the observed trends can be exploited for IGV optimization. This work indicates that the IGV is a highly promising option for millimeter-wave applications.

Original languageEnglish
Article number5739134
Pages (from-to)1520-1528
Number of pages9
JournalIEEE Transactions on Microwave Theory and Techniques
Issue number6
Publication statusPublished - 2011 Jun

Bibliographical note

Funding Information:
Manuscript received January 11, 2011; accepted February 11, 2011. Date of publication March 24, 2011; date of current version June 15, 2011. This work was supported by the National Research Foundation of Korea (NRF) under the Basic Science Research Program funded by the Ministry of Education, Science and Technology (MEST) (2009-0079994).


  • Millimeter wave
  • Q factor
  • varactors

ASJC Scopus subject areas

  • Radiation
  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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