A D-band Active Imager in a SiGe HBT Technology

Daekeun Yoon; Kiryong Song; Jungsoo Kim; Mehmet Kaynak; Bernd Tillack; Jae Sung Rieh

doi:10.1007/s10762-014-0137-1

A D-band Active Imager in a SiGe HBT Technology

Daekeun Yoon, Kiryong Song, Jungsoo Kim, Mehmet Kaynak, Bernd Tillack, Jae Sung Rieh

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

In this paper, an amplifier and a detector operating near 140 GHz have been developed and integrated together with an on-chip antenna for an integrated active imager based on a 0.13-μm SiGe HBT technology. The 5-stage differential common-emitter (CE) amplifier shows a peak gain of 14 dB and noise figure (NF) down to 10 dB around 140 GHz with a DC power dissipation of 18 mW. The common-base (CB) differential detector exhibits a peak responsivity of 52.5 kV/W and a noise equivalent power (NEP) of 3.3 pW/Hz^1/2. For the integrated imager, a peak responsivity of 1,740 kV/W and a minimum NEP of 80 fW/Hz^1/2 were achieved with a DC power dissipation of 18 mW. With the fabricated active imager with on-chip antenna, which occupies an area of 2,200 × 600 μm² including the antenna and bonding pads, images of various objects were successfully acquired.

Original language	English
Pages (from-to)	335-349
Number of pages	15
Journal	Journal of Infrared, Millimeter, and Terahertz Waves
Volume	36
Issue number	4
DOIs	https://doi.org/10.1007/s10762-014-0137-1
Publication status	Published - 2015 Apr

Keywords

bipolar integrated circuit
heterodyne bipolar transistors
imaging

ASJC Scopus subject areas

Radiation
Instrumentation
Condensed Matter Physics
Electrical and Electronic Engineering

Access to Document

10.1007/s10762-014-0137-1

Cite this

@article{32364e51fad742a18057390cb343c766,

title = "A D-band Active Imager in a SiGe HBT Technology",

abstract = "In this paper, an amplifier and a detector operating near 140 GHz have been developed and integrated together with an on-chip antenna for an integrated active imager based on a 0.13-μm SiGe HBT technology. The 5-stage differential common-emitter (CE) amplifier shows a peak gain of 14 dB and noise figure (NF) down to 10 dB around 140 GHz with a DC power dissipation of 18 mW. The common-base (CB) differential detector exhibits a peak responsivity of 52.5 kV/W and a noise equivalent power (NEP) of 3.3 pW/Hz1/2. For the integrated imager, a peak responsivity of 1,740 kV/W and a minimum NEP of 80 fW/Hz1/2 were achieved with a DC power dissipation of 18 mW. With the fabricated active imager with on-chip antenna, which occupies an area of 2,200 × 600 μm2 including the antenna and bonding pads, images of various objects were successfully acquired.",

keywords = "bipolar integrated circuit, heterodyne bipolar transistors, imaging",

author = "Daekeun Yoon and Kiryong Song and Jungsoo Kim and Mehmet Kaynak and Bernd Tillack and Rieh, {Jae Sung}",

year = "2015",

month = apr,

doi = "10.1007/s10762-014-0137-1",

language = "English",

volume = "36",

pages = "335--349",

journal = "Journal of Infrared, Millimeter, and Terahertz Waves",

issn = "1866-6892",

publisher = "Springer New York",

number = "4",

}

TY - JOUR

T1 - A D-band Active Imager in a SiGe HBT Technology

AU - Yoon, Daekeun

AU - Song, Kiryong

AU - Kim, Jungsoo

AU - Kaynak, Mehmet

AU - Tillack, Bernd

AU - Rieh, Jae Sung

PY - 2015/4

Y1 - 2015/4

N2 - In this paper, an amplifier and a detector operating near 140 GHz have been developed and integrated together with an on-chip antenna for an integrated active imager based on a 0.13-μm SiGe HBT technology. The 5-stage differential common-emitter (CE) amplifier shows a peak gain of 14 dB and noise figure (NF) down to 10 dB around 140 GHz with a DC power dissipation of 18 mW. The common-base (CB) differential detector exhibits a peak responsivity of 52.5 kV/W and a noise equivalent power (NEP) of 3.3 pW/Hz1/2. For the integrated imager, a peak responsivity of 1,740 kV/W and a minimum NEP of 80 fW/Hz1/2 were achieved with a DC power dissipation of 18 mW. With the fabricated active imager with on-chip antenna, which occupies an area of 2,200 × 600 μm2 including the antenna and bonding pads, images of various objects were successfully acquired.

AB - In this paper, an amplifier and a detector operating near 140 GHz have been developed and integrated together with an on-chip antenna for an integrated active imager based on a 0.13-μm SiGe HBT technology. The 5-stage differential common-emitter (CE) amplifier shows a peak gain of 14 dB and noise figure (NF) down to 10 dB around 140 GHz with a DC power dissipation of 18 mW. The common-base (CB) differential detector exhibits a peak responsivity of 52.5 kV/W and a noise equivalent power (NEP) of 3.3 pW/Hz1/2. For the integrated imager, a peak responsivity of 1,740 kV/W and a minimum NEP of 80 fW/Hz1/2 were achieved with a DC power dissipation of 18 mW. With the fabricated active imager with on-chip antenna, which occupies an area of 2,200 × 600 μm2 including the antenna and bonding pads, images of various objects were successfully acquired.

KW - bipolar integrated circuit

KW - heterodyne bipolar transistors

KW - imaging

UR - http://www.scopus.com/inward/record.url?scp=84925491327&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84925491327&partnerID=8YFLogxK

U2 - 10.1007/s10762-014-0137-1

DO - 10.1007/s10762-014-0137-1

M3 - Article

AN - SCOPUS:84925491327

SN - 1866-6892

VL - 36

SP - 335

EP - 349

JO - Journal of Infrared, Millimeter, and Terahertz Waves

JF - Journal of Infrared, Millimeter, and Terahertz Waves

IS - 4

ER -

A D-band Active Imager in a SiGe HBT Technology

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this