A D-band Active Imager in a SiGe HBT Technology

Daekeun Yoon; Kiryong Song; Jungsoo Kim; Mehmet Kaynak; Bernd Tillack; Jae Sung Rieh

doi:10.1007/s10762-014-0137-1

A D-band Active Imager in a SiGe HBT Technology

Daekeun Yoon, Kiryong Song, Jungsoo Kim, Mehmet Kaynak, Bernd Tillack, Jae Sung Rieh

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

In this paper, an amplifier and a detector operating near 140 GHz have been developed and integrated together with an on-chip antenna for an integrated active imager based on a 0.13-μm SiGe HBT technology. The 5-stage differential common-emitter (CE) amplifier shows a peak gain of 14 dB and noise figure (NF) down to 10 dB around 140 GHz with a DC power dissipation of 18 mW. The common-base (CB) differential detector exhibits a peak responsivity of 52.5 kV/W and a noise equivalent power (NEP) of 3.3 pW/Hz^1/2. For the integrated imager, a peak responsivity of 1,740 kV/W and a minimum NEP of 80 fW/Hz^1/2 were achieved with a DC power dissipation of 18 mW. With the fabricated active imager with on-chip antenna, which occupies an area of 2,200 × 600 μm² including the antenna and bonding pads, images of various objects were successfully acquired.

Original language	English
Pages (from-to)	335-349
Number of pages	15
Journal	Journal of Infrared, Millimeter, and Terahertz Waves
Volume	36
Issue number	4
DOIs	https://doi.org/10.1007/s10762-014-0137-1
Publication status	Published - 2015 Apr

Keywords

bipolar integrated circuit
heterodyne bipolar transistors
imaging

ASJC Scopus subject areas

Radiation
Instrumentation
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1007/s10762-014-0137-1

Cite this

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title = "A D-band Active Imager in a SiGe HBT Technology",

abstract = "In this paper, an amplifier and a detector operating near 140 GHz have been developed and integrated together with an on-chip antenna for an integrated active imager based on a 0.13-μm SiGe HBT technology. The 5-stage differential common-emitter (CE) amplifier shows a peak gain of 14 dB and noise figure (NF) down to 10 dB around 140 GHz with a DC power dissipation of 18 mW. The common-base (CB) differential detector exhibits a peak responsivity of 52.5 kV/W and a noise equivalent power (NEP) of 3.3 pW/Hz1/2. For the integrated imager, a peak responsivity of 1,740 kV/W and a minimum NEP of 80 fW/Hz1/2 were achieved with a DC power dissipation of 18 mW. With the fabricated active imager with on-chip antenna, which occupies an area of 2,200 × 600 μm2 including the antenna and bonding pads, images of various objects were successfully acquired.",

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T1 - A D-band Active Imager in a SiGe HBT Technology

AU - Yoon, Daekeun

AU - Song, Kiryong

AU - Kim, Jungsoo

AU - Kaynak, Mehmet

AU - Tillack, Bernd

AU - Rieh, Jae Sung

PY - 2015/4

Y1 - 2015/4

N2 - In this paper, an amplifier and a detector operating near 140 GHz have been developed and integrated together with an on-chip antenna for an integrated active imager based on a 0.13-μm SiGe HBT technology. The 5-stage differential common-emitter (CE) amplifier shows a peak gain of 14 dB and noise figure (NF) down to 10 dB around 140 GHz with a DC power dissipation of 18 mW. The common-base (CB) differential detector exhibits a peak responsivity of 52.5 kV/W and a noise equivalent power (NEP) of 3.3 pW/Hz1/2. For the integrated imager, a peak responsivity of 1,740 kV/W and a minimum NEP of 80 fW/Hz1/2 were achieved with a DC power dissipation of 18 mW. With the fabricated active imager with on-chip antenna, which occupies an area of 2,200 × 600 μm2 including the antenna and bonding pads, images of various objects were successfully acquired.

AB - In this paper, an amplifier and a detector operating near 140 GHz have been developed and integrated together with an on-chip antenna for an integrated active imager based on a 0.13-μm SiGe HBT technology. The 5-stage differential common-emitter (CE) amplifier shows a peak gain of 14 dB and noise figure (NF) down to 10 dB around 140 GHz with a DC power dissipation of 18 mW. The common-base (CB) differential detector exhibits a peak responsivity of 52.5 kV/W and a noise equivalent power (NEP) of 3.3 pW/Hz1/2. For the integrated imager, a peak responsivity of 1,740 kV/W and a minimum NEP of 80 fW/Hz1/2 were achieved with a DC power dissipation of 18 mW. With the fabricated active imager with on-chip antenna, which occupies an area of 2,200 × 600 μm2 including the antenna and bonding pads, images of various objects were successfully acquired.

KW - bipolar integrated circuit

KW - heterodyne bipolar transistors

KW - imaging

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A D-band Active Imager in a SiGe HBT Technology

Abstract

Keywords

ASJC Scopus subject areas

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