A Dual-Domain Dynamic Reference Sensing for Reliable Read Operation in SOT-MRAM

Jooyoon Kim, Yunho Jang, Taehwan Kim, Jongsun Park

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)


Although spin orbit torque magnetic random access memory (SOT-MRAM) is one of the strong candidates for next-generation embedded memories, the degradation of read margin due to low tunnel magnetoresistance ratio (TMR) with process variations has been a large concern. In this paper, we present the dual-domain dynamic reference (DDDR) sensing scheme, where the reference voltage can be dynamically changed based on the combined voltage and time domain sensing to increase the sensing margin. The Half Schmitt trigger and sample & hold circuits are efficiently employed to generate data-dependent reference voltages and to store the sampled voltage levels at different times, respectively. According to the simulations using 28nm CMOS technology with 128 by 128 SOT-MRAM array, the proposed DDDR approach achieves a 243mV of sensing margin under 6.08E-8 bit-error-rate (BER) at 1.76ns, which is 2X larger margin with more than 100 times lower BER compared to the conventional read scheme. When scaling down the pre-charge voltage, the proposed scheme achieves more than 50% of the read energy savings under 1E-5 target BER condition.

Original languageEnglish
Pages (from-to)2049-2059
Number of pages11
JournalIEEE Transactions on Circuits and Systems I: Regular Papers
Issue number5
Publication statusPublished - 2022 May 1

Bibliographical note

Funding Information:
This work was supported in part by the National Research and Development Program through the National Research Foundation of Korea by the Ministry of Science and ICT under Grant NRF-2020M3F3A2A01082591, in part by the National Research Foundation of Korea grant funded by the Korea government under Grant NRF-2020R1A2C3014820, and in part by the Samsung Electronics University Research and Development Program under Grant IO210715-08821-01 (Circuits and Architecture Design of SOT MRAM)

Publisher Copyright:
© 2004-2012 IEEE.


  • Sensing circuit
  • dual-domain
  • dynamic reference
  • sensing margin
  • spintronics

ASJC Scopus subject areas

  • Electrical and Electronic Engineering


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