A fabrication technique for top-gate ZnO nanowire field-effect transistors by a photolithography process

Kihyun Keem, Jeongmin Kang, Changjoon Yoon, Donghyuk Yeom, Dong Young Jeong, Byung Moo Moon, Sangsig Kim

    Research output: Contribution to journalArticlepeer-review

    27 Citations (Scopus)

    Abstract

    In this study, top-gate ZnO nanowire field-effect transistors (FETs) were successfully fabricated using a photolithography process, and their electrical properties were characterized by I-V measurements. Their electrical characteristics were compared with those of back-gate ZnO nanowire FETs. The fabricated nanowire FETs exhibit good contact between the ZnO nanowire channels and Ti metal electrodes. A representative top-gate FET showed a higher gate dependence than a representative back-gate FET; the peak transconductances of the back- and top-gate FETs were 19 nS and 248 nS, respectively. These characteristics reveal that the top-gate nanowire FET fabricated by the photolithography process has better performance. The fabrication technique used for the nanowire FETs by a photolithography process in this study is applicable to the fabrication of various devices including TFTs, memory devices, photodetectors, and so on.

    Original languageEnglish
    Pages (from-to)1622-1626
    Number of pages5
    JournalMicroelectronic Engineering
    Volume84
    Issue number5-8
    DOIs
    Publication statusPublished - 2007 May

    Bibliographical note

    Funding Information:
    This study was supported by the National Research Program for the 0.1 Terabit Non-Volatile Memory Development (10022965-2005-11), National Research Laboratory (M10500000045-05J0000-04510), National R&D Project for Nano Science and Technology (10022916-2005-21), Center for Integrated-Nano-Systems (CINS) of Korea Research Foundation (KRF-2005-005-D00087).

    Keywords

    • FET
    • Fabrication
    • Nanowire
    • Photolithography
    • Top-gate

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Atomic and Molecular Physics, and Optics
    • Condensed Matter Physics
    • Surfaces, Coatings and Films
    • Electrical and Electronic Engineering

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