A fabrication technique for top-gate ZnO nanowire field-effect transistors by a photolithography process

Kihyun Keem; Jeongmin Kang; Changjoon Yoon; Donghyuk Yeom; Dong Young Jeong; Byung Moo Moon; Sangsig Kim

doi:10.1016/j.mee.2007.01.258

A fabrication technique for top-gate ZnO nanowire field-effect transistors by a photolithography process

Kihyun Keem, Jeongmin Kang, Changjoon Yoon, Donghyuk Yeom, Dong Young Jeong, Byung Moo Moon, Sangsig Kim

Research output: Contribution to journal › Article › peer-review

27 Citations (Scopus)

Abstract

In this study, top-gate ZnO nanowire field-effect transistors (FETs) were successfully fabricated using a photolithography process, and their electrical properties were characterized by I-V measurements. Their electrical characteristics were compared with those of back-gate ZnO nanowire FETs. The fabricated nanowire FETs exhibit good contact between the ZnO nanowire channels and Ti metal electrodes. A representative top-gate FET showed a higher gate dependence than a representative back-gate FET; the peak transconductances of the back- and top-gate FETs were 19 nS and 248 nS, respectively. These characteristics reveal that the top-gate nanowire FET fabricated by the photolithography process has better performance. The fabrication technique used for the nanowire FETs by a photolithography process in this study is applicable to the fabrication of various devices including TFTs, memory devices, photodetectors, and so on.

Original language	English
Pages (from-to)	1622-1626
Number of pages	5
Journal	Microelectronic Engineering
Volume	84
Issue number	5-8
DOIs	https://doi.org/10.1016/j.mee.2007.01.258
Publication status	Published - 2007 May

Bibliographical note

Funding Information:
This study was supported by the National Research Program for the 0.1 Terabit Non-Volatile Memory Development (10022965-2005-11), National Research Laboratory (M10500000045-05J0000-04510), National R&D Project for Nano Science and Technology (10022916-2005-21), Center for Integrated-Nano-Systems (CINS) of Korea Research Foundation (KRF-2005-005-D00087).

Keywords

FET
Fabrication
Nanowire
Photolithography
Top-gate

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

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10.1016/j.mee.2007.01.258

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title = "A fabrication technique for top-gate ZnO nanowire field-effect transistors by a photolithography process",

abstract = "In this study, top-gate ZnO nanowire field-effect transistors (FETs) were successfully fabricated using a photolithography process, and their electrical properties were characterized by I-V measurements. Their electrical characteristics were compared with those of back-gate ZnO nanowire FETs. The fabricated nanowire FETs exhibit good contact between the ZnO nanowire channels and Ti metal electrodes. A representative top-gate FET showed a higher gate dependence than a representative back-gate FET; the peak transconductances of the back- and top-gate FETs were 19 nS and 248 nS, respectively. These characteristics reveal that the top-gate nanowire FET fabricated by the photolithography process has better performance. The fabrication technique used for the nanowire FETs by a photolithography process in this study is applicable to the fabrication of various devices including TFTs, memory devices, photodetectors, and so on.",

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author = "Kihyun Keem and Jeongmin Kang and Changjoon Yoon and Donghyuk Yeom and Jeong, {Dong Young} and Moon, {Byung Moo} and Sangsig Kim",

note = "Funding Information: This study was supported by the National Research Program for the 0.1 Terabit Non-Volatile Memory Development (10022965-2005-11), National Research Laboratory (M10500000045-05J0000-04510), National R&D Project for Nano Science and Technology (10022916-2005-21), Center for Integrated-Nano-Systems (CINS) of Korea Research Foundation (KRF-2005-005-D00087).",

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AU - Keem, Kihyun

AU - Kang, Jeongmin

AU - Yoon, Changjoon

AU - Yeom, Donghyuk

AU - Jeong, Dong Young

AU - Moon, Byung Moo

AU - Kim, Sangsig

N1 - Funding Information: This study was supported by the National Research Program for the 0.1 Terabit Non-Volatile Memory Development (10022965-2005-11), National Research Laboratory (M10500000045-05J0000-04510), National R&D Project for Nano Science and Technology (10022916-2005-21), Center for Integrated-Nano-Systems (CINS) of Korea Research Foundation (KRF-2005-005-D00087).

PY - 2007/5

Y1 - 2007/5

N2 - In this study, top-gate ZnO nanowire field-effect transistors (FETs) were successfully fabricated using a photolithography process, and their electrical properties were characterized by I-V measurements. Their electrical characteristics were compared with those of back-gate ZnO nanowire FETs. The fabricated nanowire FETs exhibit good contact between the ZnO nanowire channels and Ti metal electrodes. A representative top-gate FET showed a higher gate dependence than a representative back-gate FET; the peak transconductances of the back- and top-gate FETs were 19 nS and 248 nS, respectively. These characteristics reveal that the top-gate nanowire FET fabricated by the photolithography process has better performance. The fabrication technique used for the nanowire FETs by a photolithography process in this study is applicable to the fabrication of various devices including TFTs, memory devices, photodetectors, and so on.

AB - In this study, top-gate ZnO nanowire field-effect transistors (FETs) were successfully fabricated using a photolithography process, and their electrical properties were characterized by I-V measurements. Their electrical characteristics were compared with those of back-gate ZnO nanowire FETs. The fabricated nanowire FETs exhibit good contact between the ZnO nanowire channels and Ti metal electrodes. A representative top-gate FET showed a higher gate dependence than a representative back-gate FET; the peak transconductances of the back- and top-gate FETs were 19 nS and 248 nS, respectively. These characteristics reveal that the top-gate nanowire FET fabricated by the photolithography process has better performance. The fabrication technique used for the nanowire FETs by a photolithography process in this study is applicable to the fabrication of various devices including TFTs, memory devices, photodetectors, and so on.

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A fabrication technique for top-gate ZnO nanowire field-effect transistors by a photolithography process

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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