A facile method for highly uniform GaN-based nanorod light-emitting diodes with InGaN/GaN multi-quantum-wells

Hyunik Park; Kwang Hyeon Baik; Jihyun Kim; Fan Ren; Stephen J. Pearton

doi:10.1364/OE.21.012908

A facile method for highly uniform GaN-based nanorod light-emitting diodes with InGaN/GaN multi-quantum-wells

Hyunik Park, Kwang Hyeon Baik, Jihyun Kim, Fan Ren, Stephen J. Pearton

Department of Chemical and Biological Engineering

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

We report on a simple and reproducible method for fabricating InGaN/GaN multi-quantum-well (MQW) nanorod light-emitting diodes (LEDs), prepared by combining a SiO₂ nanosphere lithography and dry-etch process. Focused-ion-beam (FIB)-deposited Pt was contacted to both ends of the nanorod LEDs, producing bright electroluminescence from the LEDs under forward bias conditions. The turn-on voltage in these nanorod LEDs was higher (13 V) than in companion thin film devices (3 V) and this can be attributed to the high contact resistance between the FIB-deposited Pt and nanorod LEDs and the damage induced by inductively-coupled plasma and Ga + -ions. Our method to obtain uniform MQW nanorod LEDs shows promise for improving the reproducibility of nano-optoelectronics.

Original language	English
Pages (from-to)	12908-12913
Number of pages	6
Journal	Optics Express
Volume	21
Issue number	10
DOIs	https://doi.org/10.1364/OE.21.012908
Publication status	Published - 2013 May 20

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics

Access to Document

10.1364/OE.21.012908

Cite this

@article{58e43add01354f0692176628ea60e3da,

title = "A facile method for highly uniform GaN-based nanorod light-emitting diodes with InGaN/GaN multi-quantum-wells",

abstract = "We report on a simple and reproducible method for fabricating InGaN/GaN multi-quantum-well (MQW) nanorod light-emitting diodes (LEDs), prepared by combining a SiO2 nanosphere lithography and dry-etch process. Focused-ion-beam (FIB)-deposited Pt was contacted to both ends of the nanorod LEDs, producing bright electroluminescence from the LEDs under forward bias conditions. The turn-on voltage in these nanorod LEDs was higher (13 V) than in companion thin film devices (3 V) and this can be attributed to the high contact resistance between the FIB-deposited Pt and nanorod LEDs and the damage induced by inductively-coupled plasma and Ga + -ions. Our method to obtain uniform MQW nanorod LEDs shows promise for improving the reproducibility of nano-optoelectronics.",

author = "Hyunik Park and Baik, {Kwang Hyeon} and Jihyun Kim and Fan Ren and Pearton, {Stephen J.}",

year = "2013",

month = may,

day = "20",

doi = "10.1364/OE.21.012908",

language = "English",

volume = "21",

pages = "12908--12913",

journal = "Optics Express",

issn = "1094-4087",

publisher = "The Optical Society",

number = "10",

}

TY - JOUR

T1 - A facile method for highly uniform GaN-based nanorod light-emitting diodes with InGaN/GaN multi-quantum-wells

AU - Park, Hyunik

AU - Baik, Kwang Hyeon

AU - Kim, Jihyun

AU - Ren, Fan

AU - Pearton, Stephen J.

PY - 2013/5/20

Y1 - 2013/5/20

N2 - We report on a simple and reproducible method for fabricating InGaN/GaN multi-quantum-well (MQW) nanorod light-emitting diodes (LEDs), prepared by combining a SiO2 nanosphere lithography and dry-etch process. Focused-ion-beam (FIB)-deposited Pt was contacted to both ends of the nanorod LEDs, producing bright electroluminescence from the LEDs under forward bias conditions. The turn-on voltage in these nanorod LEDs was higher (13 V) than in companion thin film devices (3 V) and this can be attributed to the high contact resistance between the FIB-deposited Pt and nanorod LEDs and the damage induced by inductively-coupled plasma and Ga + -ions. Our method to obtain uniform MQW nanorod LEDs shows promise for improving the reproducibility of nano-optoelectronics.

AB - We report on a simple and reproducible method for fabricating InGaN/GaN multi-quantum-well (MQW) nanorod light-emitting diodes (LEDs), prepared by combining a SiO2 nanosphere lithography and dry-etch process. Focused-ion-beam (FIB)-deposited Pt was contacted to both ends of the nanorod LEDs, producing bright electroluminescence from the LEDs under forward bias conditions. The turn-on voltage in these nanorod LEDs was higher (13 V) than in companion thin film devices (3 V) and this can be attributed to the high contact resistance between the FIB-deposited Pt and nanorod LEDs and the damage induced by inductively-coupled plasma and Ga + -ions. Our method to obtain uniform MQW nanorod LEDs shows promise for improving the reproducibility of nano-optoelectronics.

UR - http://www.scopus.com/inward/record.url?scp=84878596681&partnerID=8YFLogxK

U2 - 10.1364/OE.21.012908

DO - 10.1364/OE.21.012908

M3 - Article

C2 - 23736510

AN - SCOPUS:84878596681

SN - 1094-4087

VL - 21

SP - 12908

EP - 12913

JO - Optics Express

JF - Optics Express

IS - 10

ER -

A facile method for highly uniform GaN-based nanorod light-emitting diodes with InGaN/GaN multi-quantum-wells

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this