A ferroelectric based passive RFID tag for UHF (860-960 MHz) band

Hee Bok Kang; Suk Kyoung Hong; Hae Chan Park; Heon Yong Chang; Kun Woo Park; Jin Hong Ahn; Joong Sik Kih; Man Young Sung; Young Kwon Sung

doi:10.1080/10584580601077617

A ferroelectric based passive RFID tag for UHF (860-960 MHz) band

Hee Bok Kang, Suk Kyoung Hong, Hae Chan Park, Heon Yong Chang, Kun Woo Park, Jin Hong Ahn, Joong Sik Kih, Man Young Sung, Young Kwon Sung

* Honorary professors

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

For a longer working distance between passive tags and the reader, the ferroelectric based technologies are proposed in UHF (860-960 MHz) band transponder. The small ferroelectric capacitor layout area with a stacked capacitor structure over circuit region and a large dielectric permittivity of 250 to 500 and small 1T1C cell array layout area with simple 2T2C based reference scheme allow small chip size. The low operation voltage of 1.5 V to 2.0 V without high voltage boosting scheme also contribute to small power consumption and low cost.

Original language	English
Pages (from-to)	94-105
Number of pages	12
Journal	Integrated Ferroelectrics
Volume	89
Issue number	1
DOIs	https://doi.org/10.1080/10584580601077617
Publication status	Published - 2007

Bibliographical note

Funding Information:
This work was supported by “System IC 2010” project of Korea Ministry of Commerce, Industry and Energy.

Keywords

EEPROM
EPC
FeRAM
Passive RFID tag
Stacked ferroelectric capacitor
UHF

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Control and Systems Engineering
Ceramics and Composites
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1080/10584580601077617

Cite this

@article{e0f868e1eeb548a286ce9078a8398f4a,

title = "A ferroelectric based passive RFID tag for UHF (860-960 MHz) band",

abstract = "For a longer working distance between passive tags and the reader, the ferroelectric based technologies are proposed in UHF (860-960 MHz) band transponder. The small ferroelectric capacitor layout area with a stacked capacitor structure over circuit region and a large dielectric permittivity of 250 to 500 and small 1T1C cell array layout area with simple 2T2C based reference scheme allow small chip size. The low operation voltage of 1.5 V to 2.0 V without high voltage boosting scheme also contribute to small power consumption and low cost.",

keywords = "EEPROM, EPC, FeRAM, Passive RFID tag, Stacked ferroelectric capacitor, UHF",

author = "Kang, {Hee Bok} and Hong, {Suk Kyoung} and Park, {Hae Chan} and Chang, {Heon Yong} and Park, {Kun Woo} and Ahn, {Jin Hong} and Kih, {Joong Sik} and Sung, {Man Young} and Sung, {Young Kwon}",

note = "Funding Information: This work was supported by “System IC 2010” project of Korea Ministry of Commerce, Industry and Energy.",

year = "2007",

doi = "10.1080/10584580601077617",

language = "English",

volume = "89",

pages = "94--105",

journal = "Integrated Ferroelectrics",

issn = "1058-4587",

publisher = "Taylor and Francis Ltd.",

number = "1",

}

TY - JOUR

T1 - A ferroelectric based passive RFID tag for UHF (860-960 MHz) band

AU - Kang, Hee Bok

AU - Hong, Suk Kyoung

AU - Park, Hae Chan

AU - Chang, Heon Yong

AU - Park, Kun Woo

AU - Ahn, Jin Hong

AU - Kih, Joong Sik

AU - Sung, Man Young

AU - Sung, Young Kwon

N1 - Funding Information: This work was supported by “System IC 2010” project of Korea Ministry of Commerce, Industry and Energy.

PY - 2007

Y1 - 2007

N2 - For a longer working distance between passive tags and the reader, the ferroelectric based technologies are proposed in UHF (860-960 MHz) band transponder. The small ferroelectric capacitor layout area with a stacked capacitor structure over circuit region and a large dielectric permittivity of 250 to 500 and small 1T1C cell array layout area with simple 2T2C based reference scheme allow small chip size. The low operation voltage of 1.5 V to 2.0 V without high voltage boosting scheme also contribute to small power consumption and low cost.

AB - For a longer working distance between passive tags and the reader, the ferroelectric based technologies are proposed in UHF (860-960 MHz) band transponder. The small ferroelectric capacitor layout area with a stacked capacitor structure over circuit region and a large dielectric permittivity of 250 to 500 and small 1T1C cell array layout area with simple 2T2C based reference scheme allow small chip size. The low operation voltage of 1.5 V to 2.0 V without high voltage boosting scheme also contribute to small power consumption and low cost.

KW - EEPROM

KW - EPC

KW - FeRAM

KW - Passive RFID tag

KW - Stacked ferroelectric capacitor

KW - UHF

UR - http://www.scopus.com/inward/record.url?scp=63749094852&partnerID=8YFLogxK

U2 - 10.1080/10584580601077617

DO - 10.1080/10584580601077617

M3 - Article

AN - SCOPUS:63749094852

SN - 1058-4587

VL - 89

SP - 94

EP - 105

JO - Integrated Ferroelectrics

JF - Integrated Ferroelectrics

IS - 1

ER -

A ferroelectric based passive RFID tag for UHF (860-960 MHz) band

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

Access to Document

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