A Full Ka-Band CMOS Amplifier Using Inductive Neutralization with a Flat Gain of 13 ± 0.2 dB

Byungwook Kim, Sanggeun Jeon

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)


This paper presents a CMOS wideband amplifier operating in the full Ka-band, with a low gain variation. An inductive neutralization is applied to the amplifier to compensate for the gain roll-off in the high-frequency region. Neutralization inductance is carefully determined considering the tradeoff between stability and gain. To achieve a low gain variation over the full Ka-band, the amplifier employs the frequency staggering technique in which impedance matching for three gain stages is performed at different frequencies of 26, 34, and 42 GHz. The experimental results show that a peak gain of 13.2 dB is achieved at 39.2 GHz. The 3 dB bandwidth is from 23.5 to 41.7 GHz, which fully covers the Ka-band. Especially, the gain ripple of the amplifier is only 13 ± 0.2 dB over a wide bandwidth from 26.2 to 40.2 GHz. The input and output return loss values are better than −10 dB from 26.3 to 40.1 GHz and from 25.3 to 50 GHz, respectively. The DC power consumption is 18.6 mW.

Original languageEnglish
Article number4782
JournalApplied Sciences (Switzerland)
Issue number9
Publication statusPublished - 2022 May 1

Bibliographical note

Funding Information:
This study was supported by the Institute of Information and Communications Technology Planning and Evaluation (IITP) grant funded by the Korean government (MSIT) (No. 2021-0-00260, Research on LEO Inter-Satellite Links).

Publisher Copyright:
© 2022 by the authors. Licensee MDPI, Basel, Switzerland.


  • CMOS amplifier
  • frequency staggering technique
  • inductive neutralization technique
  • Ka-band
  • wideband flat gain

ASJC Scopus subject areas

  • Materials Science(all)
  • Instrumentation
  • Engineering(all)
  • Process Chemistry and Technology
  • Computer Science Applications
  • Fluid Flow and Transfer Processes


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