Abstract
A fully integrated medium power amplifier operating over the entire X-band is demonstrated in a 0.11-μm CMOS technology. A double-resonance technique is used for wideband input matching. At the output load, wideband class-E harmonic matching is performed for up to the third harmonic frequency to achieve high output power and efficiency. The amplifier exhibits measured small-signal gain exceeding 7.6 dB over a wide 3-dB bandwidth from 7.6 to 13.7 GHz. The output power and power added efficiency (PAE) are higher than 10.7 dBm and 15%, respectively, at the entire X-band (8-12 GHz). The peak PAE is 20.2% with an output power of 12.4 dBm at 10 GHz.
Original language | English |
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Pages (from-to) | 645-649 |
Number of pages | 5 |
Journal | Microwave and Optical Technology Letters |
Volume | 57 |
Issue number | 3 |
DOIs | |
Publication status | Published - 2015 Mar 1 |
Bibliographical note
Publisher Copyright:© 2015 Wiley Periodicals, Inc.
Keywords
- Class-E amplifier
- Full X-band
- Medium power amplifier
- Wideband harmonic matching
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Electrical and Electronic Engineering