A full X-band CMOS amplifier with wideband class-E harmonic matching

Seungwon Park, Sanggeun Jeon

    Research output: Contribution to journalArticlepeer-review

    8 Citations (Scopus)

    Abstract

    A fully integrated medium power amplifier operating over the entire X-band is demonstrated in a 0.11-μm CMOS technology. A double-resonance technique is used for wideband input matching. At the output load, wideband class-E harmonic matching is performed for up to the third harmonic frequency to achieve high output power and efficiency. The amplifier exhibits measured small-signal gain exceeding 7.6 dB over a wide 3-dB bandwidth from 7.6 to 13.7 GHz. The output power and power added efficiency (PAE) are higher than 10.7 dBm and 15%, respectively, at the entire X-band (8-12 GHz). The peak PAE is 20.2% with an output power of 12.4 dBm at 10 GHz.

    Original languageEnglish
    Pages (from-to)645-649
    Number of pages5
    JournalMicrowave and Optical Technology Letters
    Volume57
    Issue number3
    DOIs
    Publication statusPublished - 2015 Mar 1

    Bibliographical note

    Publisher Copyright:
    © 2015 Wiley Periodicals, Inc.

    Keywords

    • Class-E amplifier
    • Full X-band
    • Medium power amplifier
    • Wideband harmonic matching

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Atomic and Molecular Physics, and Optics
    • Condensed Matter Physics
    • Electrical and Electronic Engineering

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