A full X-band CMOS amplifier with wideband class-E harmonic matching

Seungwon Park, Sanggeun Jeon

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)


A fully integrated medium power amplifier operating over the entire X-band is demonstrated in a 0.11-μm CMOS technology. A double-resonance technique is used for wideband input matching. At the output load, wideband class-E harmonic matching is performed for up to the third harmonic frequency to achieve high output power and efficiency. The amplifier exhibits measured small-signal gain exceeding 7.6 dB over a wide 3-dB bandwidth from 7.6 to 13.7 GHz. The output power and power added efficiency (PAE) are higher than 10.7 dBm and 15%, respectively, at the entire X-band (8-12 GHz). The peak PAE is 20.2% with an output power of 12.4 dBm at 10 GHz.

Original languageEnglish
Pages (from-to)645-649
Number of pages5
JournalMicrowave and Optical Technology Letters
Issue number3
Publication statusPublished - 2015 Mar 1

Bibliographical note

Publisher Copyright:
© 2015 Wiley Periodicals, Inc.


  • Class-E amplifier
  • Full X-band
  • Medium power amplifier
  • Wideband harmonic matching

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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