A G-band frequency doubler using a commercial 150 nm GaAs pHEMT technology

Iljin Lee; Junghyun Kim; Sanggeun Jeon

doi:10.5515/JKIEES.2017.17.3.147

A G-band frequency doubler using a commercial 150 nm GaAs pHEMT technology

Iljin Lee, Junghyun Kim, Sanggeun Jeon

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

This paper presents a frequency doubler operating at G-band that exceeds the maximum oscillation frequency (f_max) of the given transistor technology. A common-source transistor is biased on class-B to obtain sufficient output power at the second harmonic frequency. The input and output impedances are matched to achieve high output power and high return loss. The frequency doubler is fabricated in a commercial 150-nm GaAs pHEMT process and obtains a measured conversion gain of -5.5 dB and a saturated output power of -7.5 dBm at 184 GHz.

Original language	English
Pages (from-to)	147-152
Number of pages	6
Journal	Journal of Electromagnetic Engineering and Science
Volume	17
Issue number	3
DOIs	https://doi.org/10.5515/JKIEES.2017.17.3.147
Publication status	Published - 2017 Jul 1

Keywords

Frequency doubler
G-Band
GaAs pHEMT
Harmonic matching

ASJC Scopus subject areas

Radiation
Instrumentation
Computer Networks and Communications
Electrical and Electronic Engineering

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10.5515/JKIEES.2017.17.3.147

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abstract = "This paper presents a frequency doubler operating at G-band that exceeds the maximum oscillation frequency (fmax) of the given transistor technology. A common-source transistor is biased on class-B to obtain sufficient output power at the second harmonic frequency. The input and output impedances are matched to achieve high output power and high return loss. The frequency doubler is fabricated in a commercial 150-nm GaAs pHEMT process and obtains a measured conversion gain of -5.5 dB and a saturated output power of -7.5 dBm at 184 GHz.",

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N2 - This paper presents a frequency doubler operating at G-band that exceeds the maximum oscillation frequency (fmax) of the given transistor technology. A common-source transistor is biased on class-B to obtain sufficient output power at the second harmonic frequency. The input and output impedances are matched to achieve high output power and high return loss. The frequency doubler is fabricated in a commercial 150-nm GaAs pHEMT process and obtains a measured conversion gain of -5.5 dB and a saturated output power of -7.5 dBm at 184 GHz.

AB - This paper presents a frequency doubler operating at G-band that exceeds the maximum oscillation frequency (fmax) of the given transistor technology. A common-source transistor is biased on class-B to obtain sufficient output power at the second harmonic frequency. The input and output impedances are matched to achieve high output power and high return loss. The frequency doubler is fabricated in a commercial 150-nm GaAs pHEMT process and obtains a measured conversion gain of -5.5 dB and a saturated output power of -7.5 dBm at 184 GHz.

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KW - Harmonic matching

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A G-band frequency doubler using a commercial 150 nm GaAs pHEMT technology

Abstract

Keywords

ASJC Scopus subject areas

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