This paper presents a frequency doubler operating at G-band that exceeds the maximum oscillation frequency (fmax) of the given transistor technology. A common-source transistor is biased on class-B to obtain sufficient output power at the second harmonic frequency. The input and output impedances are matched to achieve high output power and high return loss. The frequency doubler is fabricated in a commercial 150-nm GaAs pHEMT process and obtains a measured conversion gain of -5.5 dB and a saturated output power of -7.5 dBm at 184 GHz.
|Number of pages||6|
|Journal||Journal of Electromagnetic Engineering and Science|
|Publication status||Published - 2017 Jul 1|
Bibliographical notePublisher Copyright:
© The Korean Institute of Electromagnetic Engineering and Science.
- Frequency doubler
- GaAs pHEMT
- Harmonic matching
ASJC Scopus subject areas
- Computer Networks and Communications
- Electrical and Electronic Engineering