A high-efficiency gan power amplifier with harmonic control based on Si-IPDS

Sung Jin An; Jong Min Yook; Tae Woong Yoon; Hyeok Kim; Jun Chul Kim; Jong Gwan Yook; Youngcheol Park; Dongsu Kim

doi:10.1002/mop.30003

A high-efficiency gan power amplifier with harmonic control based on Si-IPDS

Sung Jin An, Jong Min Yook, Tae Woong Yoon, Hyeok Kim, Jun Chul Kim, Jong Gwan Yook, Youngcheol Park, Dongsu Kim

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

This article presents a high-efficiency power amplifier using quasi-MMIC technology. The efficiency enhancement is achieved based upon the second or third harmonic control provided by input and output matching networks. The gate-source voltage waveform control with Class-F operation achieves significant efficiency improvements. The quasi-MMIC technology using silicon-integrated passive devices (Si-IPDs) can drive the solution to provide compact size at 2.4 GHz. The output matching network for Class-F operation is described, using lumped elements to reduce circuit size. The dimensions of the fabricated power amplifier are 3.6 mm × 7.6 mm, with a thickness of 0.15 mm. The measured results show that the power amplifier has a small signal gain of about 10 dB and a P_sat of 41.8 dBm with a maximum drain efficiency of 70.8% at 2.4 GHz.

Original language	English
Pages (from-to)	2178-2182
Number of pages	5
Journal	Microwave and Optical Technology Letters
Volume	58
Issue number	9
DOIs	https://doi.org/10.1002/mop.30003
Publication status	Published - 2016 Sept 1

Keywords

GaN HEMT
harmonic control
high efficiency
power amplifier
quasi-MMIC

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1002/mop.30003

Cite this

@article{9fc1d605b8c74054998977ed14c46e43,

title = "A high-efficiency gan power amplifier with harmonic control based on Si-IPDS",

abstract = "This article presents a high-efficiency power amplifier using quasi-MMIC technology. The efficiency enhancement is achieved based upon the second or third harmonic control provided by input and output matching networks. The gate-source voltage waveform control with Class-F operation achieves significant efficiency improvements. The quasi-MMIC technology using silicon-integrated passive devices (Si-IPDs) can drive the solution to provide compact size at 2.4 GHz. The output matching network for Class-F operation is described, using lumped elements to reduce circuit size. The dimensions of the fabricated power amplifier are 3.6 mm × 7.6 mm, with a thickness of 0.15 mm. The measured results show that the power amplifier has a small signal gain of about 10 dB and a Psat of 41.8 dBm with a maximum drain efficiency of 70.8% at 2.4 GHz.",

keywords = "GaN HEMT, harmonic control, high efficiency, power amplifier, quasi-MMIC",

author = "{Jin An}, Sung and {Min Yook}, Jong and {Woong Yoon}, Tae and Hyeok Kim and {Chul Kim}, Jun and Yook, {Jong Gwan} and Youngcheol Park and Dongsu Kim",

note = "Funding Information: This work was supported by the R&D Program funded by MOTIE/KETEP. [20142020103760] Publisher Copyright: {\textcopyright} 2016 Wiley Periodicals, Inc.",

year = "2016",

month = sep,

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doi = "10.1002/mop.30003",

language = "English",

volume = "58",

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journal = "Microwave and Optical Technology Letters",

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T1 - A high-efficiency gan power amplifier with harmonic control based on Si-IPDS

AU - Jin An, Sung

AU - Min Yook, Jong

AU - Woong Yoon, Tae

AU - Kim, Hyeok

AU - Chul Kim, Jun

AU - Yook, Jong Gwan

AU - Park, Youngcheol

AU - Kim, Dongsu

PY - 2016/9/1

Y1 - 2016/9/1

N2 - This article presents a high-efficiency power amplifier using quasi-MMIC technology. The efficiency enhancement is achieved based upon the second or third harmonic control provided by input and output matching networks. The gate-source voltage waveform control with Class-F operation achieves significant efficiency improvements. The quasi-MMIC technology using silicon-integrated passive devices (Si-IPDs) can drive the solution to provide compact size at 2.4 GHz. The output matching network for Class-F operation is described, using lumped elements to reduce circuit size. The dimensions of the fabricated power amplifier are 3.6 mm × 7.6 mm, with a thickness of 0.15 mm. The measured results show that the power amplifier has a small signal gain of about 10 dB and a Psat of 41.8 dBm with a maximum drain efficiency of 70.8% at 2.4 GHz.

AB - This article presents a high-efficiency power amplifier using quasi-MMIC technology. The efficiency enhancement is achieved based upon the second or third harmonic control provided by input and output matching networks. The gate-source voltage waveform control with Class-F operation achieves significant efficiency improvements. The quasi-MMIC technology using silicon-integrated passive devices (Si-IPDs) can drive the solution to provide compact size at 2.4 GHz. The output matching network for Class-F operation is described, using lumped elements to reduce circuit size. The dimensions of the fabricated power amplifier are 3.6 mm × 7.6 mm, with a thickness of 0.15 mm. The measured results show that the power amplifier has a small signal gain of about 10 dB and a Psat of 41.8 dBm with a maximum drain efficiency of 70.8% at 2.4 GHz.

KW - GaN HEMT

KW - harmonic control

KW - high efficiency

KW - power amplifier

KW - quasi-MMIC

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JO - Microwave and Optical Technology Letters

JF - Microwave and Optical Technology Letters

IS - 9

ER -

A high-efficiency gan power amplifier with harmonic control based on Si-IPDS

Abstract

Keywords

ASJC Scopus subject areas

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