Abstract
This article presents a high-efficiency power amplifier using quasi-MMIC technology. The efficiency enhancement is achieved based upon the second or third harmonic control provided by input and output matching networks. The gate-source voltage waveform control with Class-F operation achieves significant efficiency improvements. The quasi-MMIC technology using silicon-integrated passive devices (Si-IPDs) can drive the solution to provide compact size at 2.4 GHz. The output matching network for Class-F operation is described, using lumped elements to reduce circuit size. The dimensions of the fabricated power amplifier are 3.6 mm × 7.6 mm, with a thickness of 0.15 mm. The measured results show that the power amplifier has a small signal gain of about 10 dB and a Psat of 41.8 dBm with a maximum drain efficiency of 70.8% at 2.4 GHz.
| Original language | English |
|---|---|
| Pages (from-to) | 2178-2182 |
| Number of pages | 5 |
| Journal | Microwave and Optical Technology Letters |
| Volume | 58 |
| Issue number | 9 |
| DOIs | |
| Publication status | Published - 2016 Sept 1 |
Bibliographical note
Funding Information:This work was supported by the R&D Program funded by MOTIE/KETEP. [20142020103760]
Publisher Copyright:
© 2016 Wiley Periodicals, Inc.
Keywords
- GaN HEMT
- harmonic control
- high efficiency
- power amplifier
- quasi-MMIC
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Electrical and Electronic Engineering