A high-efficiency gan power amplifier with harmonic control based on Si-IPDS

Sung Jin An, Jong Min Yook, Tae Woong Yoon, Hyeok Kim, Jun Chul Kim, Jong Gwan Yook, Youngcheol Park, Dongsu Kim

    Research output: Contribution to journalArticlepeer-review

    Abstract

    This article presents a high-efficiency power amplifier using quasi-MMIC technology. The efficiency enhancement is achieved based upon the second or third harmonic control provided by input and output matching networks. The gate-source voltage waveform control with Class-F operation achieves significant efficiency improvements. The quasi-MMIC technology using silicon-integrated passive devices (Si-IPDs) can drive the solution to provide compact size at 2.4 GHz. The output matching network for Class-F operation is described, using lumped elements to reduce circuit size. The dimensions of the fabricated power amplifier are 3.6 mm × 7.6 mm, with a thickness of 0.15 mm. The measured results show that the power amplifier has a small signal gain of about 10 dB and a Psat of 41.8 dBm with a maximum drain efficiency of 70.8% at 2.4 GHz.

    Original languageEnglish
    Pages (from-to)2178-2182
    Number of pages5
    JournalMicrowave and Optical Technology Letters
    Volume58
    Issue number9
    DOIs
    Publication statusPublished - 2016 Sept 1

    Bibliographical note

    Funding Information:
    This work was supported by the R&D Program funded by MOTIE/KETEP. [20142020103760]

    Publisher Copyright:
    © 2016 Wiley Periodicals, Inc.

    Keywords

    • GaN HEMT
    • harmonic control
    • high efficiency
    • power amplifier
    • quasi-MMIC

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Atomic and Molecular Physics, and Optics
    • Condensed Matter Physics
    • Electrical and Electronic Engineering

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