A Ka-band 3-bit RF MEMS true-time-delay network

Jonathan B. Hacker; Robert E. Mihailovich; Moonil Kim; Jeffrey F. DeNatale

doi:10.1109/TMTT.2002.806508

A Ka-band 3-bit RF MEMS true-time-delay network

Jonathan B. Hacker, Robert E. Mihailovich, Moonil Kim, Jeffrey F. DeNatale

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

47 Citations (Scopus)

Abstract

A monolithic Ka-band true-time-delay (TTD) switched-line network containing 12 metal-to-metal contact RF microelectromechanical system switches has been successfully fabricated and characterized on a 75-μm-thick GaAs substrate. The compact 9.1-mm² TTD network was designed to produce flat delay time over a dc-to-40-GHz bandwidth with full 360° phase control at 45° intervals at 35 GHz. Measurements show a match to within 2% to the designed delay times at 35 GHz for all eight switch states with 2.2-dB average insertion loss over all states. Peak rms phase error is 2.28° and peak rms amplitude error is 0.28 dB from dc to 40 GHz. Return loss better than 15 dB from dc to 40 GHz for all eight states confirms the circuit's broad-band operation.

Original language	English
Pages (from-to)	305-308
Number of pages	4
Journal	IEEE Transactions on Microwave Theory and Techniques
Volume	51
Issue number	1 II
DOIs	https://doi.org/10.1109/TMTT.2002.806508
Publication status	Published - 2003 Jan

Keywords

Phase shifter
RF microelectromechanical systems (MEMS) devices
Radar antennas
True-time delay (TTD)

ASJC Scopus subject areas

Radiation
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1109/TMTT.2002.806508

Cite this

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title = "A Ka-band 3-bit RF MEMS true-time-delay network",

abstract = "A monolithic Ka-band true-time-delay (TTD) switched-line network containing 12 metal-to-metal contact RF microelectromechanical system switches has been successfully fabricated and characterized on a 75-μm-thick GaAs substrate. The compact 9.1-mm2 TTD network was designed to produce flat delay time over a dc-to-40-GHz bandwidth with full 360° phase control at 45° intervals at 35 GHz. Measurements show a match to within 2% to the designed delay times at 35 GHz for all eight switch states with 2.2-dB average insertion loss over all states. Peak rms phase error is 2.28° and peak rms amplitude error is 0.28 dB from dc to 40 GHz. Return loss better than 15 dB from dc to 40 GHz for all eight states confirms the circuit's broad-band operation.",

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note = "Funding Information: Manuscript received April 23, 2002. This work was supported by the Defense Advanced Research Projects Agency/Special Projects Office under Contract MDA972-00-3-0003. J. B. Hacker, R. E. Mihailovich, and J. F. DeNatale are with Rockwell Scientific, Thousand Oaks, CA 91360 USA. M. Kim is with Rockwell Scientific, Thousand Oaks, CA 91360 USA and also with the Electrical Engineering Department, Korea University, Seoul 136-701, Korea. Digital Object Identifier 10.1109/TMTT.2002.806508 Fig. 1. 3-bit RF MEMS phase shifter. The substrate is 75-m–thick semi-insulating GaAs with 2.1-m-thick gold traces. The circuit is 3.5 2.6 mm in size.",

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A Ka-band 3-bit RF MEMS true-time-delay network

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Keywords

ASJC Scopus subject areas

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