Abstract
In this paper, we focus on the reliability of SiGe HBTs related to scaling. HBT performance will continues to increase with no forceable significant reliability roadblocks. Designers will need to pay attention to the configuration and use conditions of the transistor.
Original language | English |
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Title of host publication | 2003 International Symposium on Compound Semiconductors, ISCS 2003 |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
Pages | 207-208 |
Number of pages | 2 |
ISBN (Electronic) | 0780378202 |
DOIs | |
Publication status | Published - 2003 |
Externally published | Yes |
Event | 2003 International Symposium on Compound Semiconductors, ISCS 2003 - San Diego, United States Duration: 2003 Aug 25 → 2003 Aug 27 |
Publication series
Name | IEEE International Symposium on Compound Semiconductors, Proceedings |
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Volume | 2003-January |
Other
Other | 2003 International Symposium on Compound Semiconductors, ISCS 2003 |
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Country/Territory | United States |
City | San Diego |
Period | 03/8/25 → 03/8/27 |
Bibliographical note
Publisher Copyright:© 2003 IEEE.
Keywords
- Current density
- Degradation
- Electromigration
- Germanium silicon alloys
- Heating
- Heterojunction bipolar transistors
- Impact ionization
- Rivers
- Silicon germanium
- Thermal resistance
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials