@inproceedings{256e0086093b43748fe766b934851eb3,
title = "A look into the future for SiGe HBTs",
abstract = "In this paper, we focus on the reliability of SiGe HBTs related to scaling. HBT performance will continues to increase with no forceable significant reliability roadblocks. Designers will need to pay attention to the configuration and use conditions of the transistor.",
keywords = "Current density, Degradation, Electromigration, Germanium silicon alloys, Heating, Heterojunction bipolar transistors, Impact ionization, Rivers, Silicon germanium, Thermal resistance",
author = "Harame, {D. L.} and G. Freeman and J. Rieh and B. Jagannathan and D. Greenberg and A. Joseph and J. Johnson and F. Guarin and Z. Yang and D. Ahlgren and P. Cottrell and J. Dunn and B. Orner and S. Subbanna",
note = "Publisher Copyright: {\textcopyright} 2003 IEEE.; 2003 International Symposium on Compound Semiconductors, ISCS 2003 ; Conference date: 25-08-2003 Through 27-08-2003",
year = "2003",
doi = "10.1109/ISCS.2003.1239978",
language = "English",
series = "IEEE International Symposium on Compound Semiconductors, Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "207--208",
booktitle = "2003 International Symposium on Compound Semiconductors, ISCS 2003",
}