A monolithic MEMS switched dual-path power amplifier

M. Kim, J. B. Hacker, R. E. Mihailovich, J. F. DeNatale

Research output: Contribution to journalArticlepeer-review

65 Citations (Scopus)


RF MEMS switches have been successfully integrated with HEMT MMIC circuits on a GaAs substrate to construct a dual-path power amplifier at X-band. The amplifier uses two MEMS switches at the input to guide the RF signal between two paths. Each path provides single-stage amplification using different size HEMT devices, one with 80-μm width and the other with 640-μm. Depending on the required output power level, one of the two paths is selected to minimize the dc power consumption. Measurements showed the amplifier producing similar small signal gains of 13.2 and 11.5 dB at 10 GHz for the small and the large devices, respectively. The best PAE was 28.1 percent with 8.5 dBm of output power for the small device, and 15.3 percent with 14.6 dBm for the large device.

Original languageEnglish
Pages (from-to)285-286
Number of pages2
JournalIEEE Microwave and Wireless Components Letters
Issue number7
Publication statusPublished - 2001 Jul


  • HEMT
  • MEMS switch
  • MMIC
  • Power amplifier

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering


Dive into the research topics of 'A monolithic MEMS switched dual-path power amplifier'. Together they form a unique fingerprint.

Cite this