A monolithic MEMS switched dual-path power amplifier

M. Kim; J. B. Hacker; R. E. Mihailovich; J. F. DeNatale

doi:10.1109/7260.933772

A monolithic MEMS switched dual-path power amplifier

M. Kim, J. B. Hacker, R. E. Mihailovich, J. F. DeNatale

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

65 Citations (Scopus)

Abstract

RF MEMS switches have been successfully integrated with HEMT MMIC circuits on a GaAs substrate to construct a dual-path power amplifier at X-band. The amplifier uses two MEMS switches at the input to guide the RF signal between two paths. Each path provides single-stage amplification using different size HEMT devices, one with 80-μm width and the other with 640-μm. Depending on the required output power level, one of the two paths is selected to minimize the dc power consumption. Measurements showed the amplifier producing similar small signal gains of 13.2 and 11.5 dB at 10 GHz for the small and the large devices, respectively. The best PAE was 28.1 percent with 8.5 dBm of output power for the small device, and 15.3 percent with 14.6 dBm for the large device.

Original language	English
Pages (from-to)	285-286
Number of pages	2
Journal	IEEE Microwave and Wireless Components Letters
Volume	11
Issue number	7
DOIs	https://doi.org/10.1109/7260.933772
Publication status	Published - 2001 Jul

Keywords

HEMT
MEMS switch
MMIC
Power amplifier

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

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10.1109/7260.933772

Cite this

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abstract = "RF MEMS switches have been successfully integrated with HEMT MMIC circuits on a GaAs substrate to construct a dual-path power amplifier at X-band. The amplifier uses two MEMS switches at the input to guide the RF signal between two paths. Each path provides single-stage amplification using different size HEMT devices, one with 80-μm width and the other with 640-μm. Depending on the required output power level, one of the two paths is selected to minimize the dc power consumption. Measurements showed the amplifier producing similar small signal gains of 13.2 and 11.5 dB at 10 GHz for the small and the large devices, respectively. The best PAE was 28.1 percent with 8.5 dBm of output power for the small device, and 15.3 percent with 14.6 dBm for the large device.",

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AU - Hacker, J. B.

AU - Mihailovich, R. E.

AU - DeNatale, J. F.

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AB - RF MEMS switches have been successfully integrated with HEMT MMIC circuits on a GaAs substrate to construct a dual-path power amplifier at X-band. The amplifier uses two MEMS switches at the input to guide the RF signal between two paths. Each path provides single-stage amplification using different size HEMT devices, one with 80-μm width and the other with 640-μm. Depending on the required output power level, one of the two paths is selected to minimize the dc power consumption. Measurements showed the amplifier producing similar small signal gains of 13.2 and 11.5 dB at 10 GHz for the small and the large devices, respectively. The best PAE was 28.1 percent with 8.5 dBm of output power for the small device, and 15.3 percent with 14.6 dBm for the large device.

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A monolithic MEMS switched dual-path power amplifier

Abstract

Keywords

ASJC Scopus subject areas

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