Abstract
A PNPN nanoscale diode is formed on a silicon-on-insulator (SOI) wafer and is composed of a serial PNPN chain layer with a nanoscale current channel area. The bottom electrode of the ferroelectric capacitor (FeCAP) is connected to a serial PNPN-nanoscale-diode chain, and the top electrode of FeCAP is connected to the wordline (WL). The bitline (BL) under the FeCAP is also connected to the serial PNPN-nanoscale-diode chain. The serial PNPN-nanoscale-diode chain layers of each nanoscale channel are separated by a dielectric insulator layer. The MEDICI-simulated PNPN-diode snap-back voltage properties are controlled by various process conditions. The leakage current shape of the reverse biased-PN diode is similar to the forward-biased current shape before the snap-back voltage region of the PNPN nanoscale diode.
| Original language | English |
|---|---|
| Pages (from-to) | 490-492 |
| Number of pages | 3 |
| Journal | Journal of the Korean Physical Society |
| Volume | 45 |
| Issue number | 2 |
| Publication status | Published - 2004 Aug |
Keywords
- FeRAM
- PNPN nanoscale diode
- Silicon-on-insulator
- Snap-back voltage
ASJC Scopus subject areas
- General Physics and Astronomy