A new CAD-compatible non-quasi-static MOS transient model with direct inclusion of depletion charge variations

D. H. Kwon; Y. S. Yu; K. H. Kim; T. W. Yoon; S. W. Hwang; D. H. Song; K. H. Lee

A new CAD-compatible non-quasi-static MOS transient model with direct inclusion of depletion charge variations

D. H. Kwon, Y. S. Yu, K. H. Kim, T. W. Yoon, S. W. Hwang, D. H. Song, K. H. Lee

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

A new CAD-compatible non-quasi-static MOS transient model is presented. Direct inclusion of depletion charge variation has been made by applying the collocation method for the model derivation. The new model accurately predicts transient currents in the cases including the cutoff region where the variation of the depletion charge is high. Furthermore, in the new model, no additional parameters other than the DC parameters are needed.

Original language	English
Pages (from-to)	S192-S195
Journal	Journal of the Korean Physical Society
Volume	33
Issue number	SUPPL. 2
Publication status	Published - 1998

ASJC Scopus subject areas

Physics and Astronomy(all)

Cite this

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abstract = "A new CAD-compatible non-quasi-static MOS transient model is presented. Direct inclusion of depletion charge variation has been made by applying the collocation method for the model derivation. The new model accurately predicts transient currents in the cases including the cutoff region where the variation of the depletion charge is high. Furthermore, in the new model, no additional parameters other than the DC parameters are needed.",

author = "Kwon, {D. H.} and Yu, {Y. S.} and Kim, {K. H.} and Yoon, {T. W.} and Hwang, {S. W.} and Song, {D. H.} and Lee, {K. H.}",

year = "1998",

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AU - Kwon, D. H.

AU - Yu, Y. S.

AU - Kim, K. H.

AU - Yoon, T. W.

AU - Hwang, S. W.

AU - Song, D. H.

AU - Lee, K. H.

PY - 1998

Y1 - 1998

N2 - A new CAD-compatible non-quasi-static MOS transient model is presented. Direct inclusion of depletion charge variation has been made by applying the collocation method for the model derivation. The new model accurately predicts transient currents in the cases including the cutoff region where the variation of the depletion charge is high. Furthermore, in the new model, no additional parameters other than the DC parameters are needed.

AB - A new CAD-compatible non-quasi-static MOS transient model is presented. Direct inclusion of depletion charge variation has been made by applying the collocation method for the model derivation. The new model accurately predicts transient currents in the cases including the cutoff region where the variation of the depletion charge is high. Furthermore, in the new model, no additional parameters other than the DC parameters are needed.

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AN - SCOPUS:0032261803

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ER -

A new CAD-compatible non-quasi-static MOS transient model with direct inclusion of depletion charge variations

Abstract

ASJC Scopus subject areas

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