A new EST with dual trench gate electrode (DTG-EST)

Dae Won Kim; Dae Jong Kim; Ey Goo Kang; Man Young Sung; Dong Hee Rhie

doi:10.1109/EDSSC.2003.1283558

A new EST with dual trench gate electrode (DTG-EST)

Dae Won Kim, Dae Jong Kim, Ey Goo Kang, Man Young Sung, Dong Hee Rhie

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

In this paper, the new dual trench gate Emitter Switched Thyristor (DTG-EST) is proposed for improving snap-back effect which leads to a lot of serious problems of device applications. And the parasitic thyristor that is inherent in the conventional EST is completely eliminated in this structure, allowing higher maximum controllable current densities for ESTs. The conventional EST exhibits snap-back with the anode voltage and current density 2.73V and 35A/cm², respectively. But the proposed DTG-EST exhibits snap-back with the anode voltage and current density 0.96V and 100A/cm², respectively.

Original language	English
Title of host publication	2003 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC 2003
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	395-398
Number of pages	4
ISBN (Print)	0780377494, 9780780377493
DOIs	https://doi.org/10.1109/EDSSC.2003.1283558
Publication status	Published - 2003
Event	IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC 2003 - Tsimshatsui, Kowloon, Hong Kong Duration: 2003 Dec 16 → 2003 Dec 18

Other

Other	IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC 2003
Country/Territory	Hong Kong
City	Tsimshatsui, Kowloon
Period	03/12/16 → 03/12/18

ASJC Scopus subject areas

Hardware and Architecture
Electrical and Electronic Engineering

Access to Document

10.1109/EDSSC.2003.1283558

Cite this

Kim, DW, Kim, DJ, Kang, EG, Sung, MY & Rhie, DH 2003, A new EST with dual trench gate electrode (DTG-EST). in 2003 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC 2003., 1283558, Institute of Electrical and Electronics Engineers Inc., pp. 395-398, IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC 2003, Tsimshatsui, Kowloon, Hong Kong, 03/12/16. https://doi.org/10.1109/EDSSC.2003.1283558

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author = "Kim, {Dae Won} and Kim, {Dae Jong} and Kang, {Ey Goo} and Sung, {Man Young} and Rhie, {Dong Hee}",

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doi = "10.1109/EDSSC.2003.1283558",

language = "English",

isbn = "0780377494",

pages = "395--398",

booktitle = "2003 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC 2003",

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N2 - In this paper, the new dual trench gate Emitter Switched Thyristor (DTG-EST) is proposed for improving snap-back effect which leads to a lot of serious problems of device applications. And the parasitic thyristor that is inherent in the conventional EST is completely eliminated in this structure, allowing higher maximum controllable current densities for ESTs. The conventional EST exhibits snap-back with the anode voltage and current density 2.73V and 35A/cm2, respectively. But the proposed DTG-EST exhibits snap-back with the anode voltage and current density 0.96V and 100A/cm2, respectively.

AB - In this paper, the new dual trench gate Emitter Switched Thyristor (DTG-EST) is proposed for improving snap-back effect which leads to a lot of serious problems of device applications. And the parasitic thyristor that is inherent in the conventional EST is completely eliminated in this structure, allowing higher maximum controllable current densities for ESTs. The conventional EST exhibits snap-back with the anode voltage and current density 2.73V and 35A/cm2, respectively. But the proposed DTG-EST exhibits snap-back with the anode voltage and current density 0.96V and 100A/cm2, respectively.

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SN - 0780377494

SN - 9780780377493

SP - 395

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BT - 2003 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC 2003

PB - Institute of Electrical and Electronics Engineers Inc.

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Y2 - 16 December 2003 through 18 December 2003

ER -

A new EST with dual trench gate electrode (DTG-EST)

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