@inproceedings{28eaa3d7f6d84ff19e386bc648e9c948,
title = "A new interface defect spectroscopy method",
abstract = "A new interface defect spectroscopy method based on variable height charge pumping capable of observing the amphoteric nature of Si/SiO2 interface states in production quality sub-micron devices is demonstrated. It can help to resolve the long standing debate about the true nature of Si/SiO2 interface states. Additionally, we show that this is a powerful technique for studying other important material systems.",
keywords = "P centers, charge pumping, interface states",
author = "Ryan, {J. T.} and Yu, {L. C.} and Han, {J. H.} and Kopanski, {J. J.} and Cheung, {K. P.} and F. Zhang and C. Wang and Campbell, {J. P.} and Suehle, {J. S.} and V. Tilak and J. Fronheiser",
year = "2011",
doi = "10.1109/IRPS.2011.5784477",
language = "English",
isbn = "9781424491117",
series = "IEEE International Reliability Physics Symposium Proceedings",
pages = "3A.4.1--3A.4.5",
booktitle = "2011 International Reliability Physics Symposium, IRPS 2011",
note = "49th International Reliability Physics Symposium, IRPS 2011 ; Conference date: 10-04-2011 Through 14-04-2011",
}