Abstract
A new Lateral Trench Insulated Gate Bipolar Transistor (LTIGBT) with p+ diverter was proposed to improve the characteristics of the conventional LTIGBT. The p+ divert layer was placed between anode electrode region and cathode electrode. Generally, if the LTIGBT had p+ divert region, the forward blocking voltage was decreased greatly because n-drift layer corresponding to punch-through region was reduced. However, the forward blocking voltage of the proposed LTIGBT with p+ diverter was about 140 V. That of the conventional LTIGBT of the same size was 105 V. The forward blocking voltage of LTIGBT with p+ diverter increased 1.3 times more than those of the conventional LTIGBT. Because the p+ diverter region of the proposed device was enclosed trench oxide layer, the electric field moved toward trench-oxide layer, and punch through breakdown of LTIGBT with p+ diverter was occurred, lately. Therefore, the p+ diverter of the proposed LTIGBT didn't relate to breakdown voltage in a different way the conventional LTIGBT. The Latch-up current densities of the conventional LTIGBT and LTIGBT with p+ diverter were 540A/cm2, and 1453A/cm2, respectively. The enhanced latch-up capability of the LTIGBT with p+ diverter was obtained through holes in the current directly reaching the cathode via the p+ divert region and p+ cathode layer beneath n+ cathode layer.
Original language | English |
---|---|
Pages | 565-568 |
Number of pages | 4 |
Publication status | Published - 2001 |
Event | 2001 International Semiconductor Conference - Sinaia, Romania Duration: 2001 Oct 9 → 2001 Oct 13 |
Conference
Conference | 2001 International Semiconductor Conference |
---|---|
Country/Territory | Romania |
City | Sinaia |
Period | 01/10/9 → 01/10/13 |
Keywords
- Forward blocking voltage
- Latch-up
- p+ diverter
- Power integrated circuits
- Power transistor
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering