A new lateral trench IGBT with p+ diverter having superior electrical characteristics

Ey Goo Kang, Seung Hyun Moon, Man Young Sung

    Research output: Contribution to conferencePaperpeer-review

    3 Citations (Scopus)

    Abstract

    A new Lateral Trench Insulated Gate Bipolar Transistor (LTIGBT) with p+ diverter was proposed to improve the characteristics of the conventional LTIGBT. The p+ divert layer was placed between anode electrode region and cathode electrode. Generally, if the LTIGBT had p+ divert region, the forward blocking voltage was decreased greatly because n-drift layer corresponding to punch-through region was reduced. However, the forward blocking voltage of the proposed LTIGBT with p+ diverter was about 140 V. That of the conventional LTIGBT of the same size was 105 V. The forward blocking voltage of LTIGBT with p+ diverter increased 1.3 times more than those of the conventional LTIGBT. Because the p+ diverter region of the proposed device was enclosed trench oxide layer, the electric field moved toward trench-oxide layer, and punch through breakdown of LTIGBT with p+ diverter was occurred, lately. Therefore, the p+ diverter of the proposed LTIGBT didn't relate to breakdown voltage in a different way the conventional LTIGBT. The Latch-up current densities of the conventional LTIGBT and LTIGBT with p+ diverter were 540A/cm2, and 1453A/cm2, respectively. The enhanced latch-up capability of the LTIGBT with p+ diverter was obtained through holes in the current directly reaching the cathode via the p+ divert region and p+ cathode layer beneath n+ cathode layer.

    Original languageEnglish
    Pages565-568
    Number of pages4
    Publication statusPublished - 2001
    Event2001 International Semiconductor Conference - Sinaia, Romania
    Duration: 2001 Oct 92001 Oct 13

    Conference

    Conference2001 International Semiconductor Conference
    Country/TerritoryRomania
    CitySinaia
    Period01/10/901/10/13

    Keywords

    • Forward blocking voltage
    • Latch-up
    • p+ diverter
    • Power integrated circuits
    • Power transistor

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics
    • Electrical and Electronic Engineering

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