A new lateral trench IGBT with p+ diverter having superior electrical characteristics

Ey Goo Kang, Seung Hyun Moon, Man Young Sung

Research output: Contribution to conferencePaperpeer-review

3 Citations (Scopus)


A new Lateral Trench Insulated Gate Bipolar Transistor (LTIGBT) with p+ diverter was proposed to improve the characteristics of the conventional LTIGBT. The p+ divert layer was placed between anode electrode region and cathode electrode. Generally, if the LTIGBT had p+ divert region, the forward blocking voltage was decreased greatly because n-drift layer corresponding to punch-through region was reduced. However, the forward blocking voltage of the proposed LTIGBT with p+ diverter was about 140 V. That of the conventional LTIGBT of the same size was 105 V. The forward blocking voltage of LTIGBT with p+ diverter increased 1.3 times more than those of the conventional LTIGBT. Because the p+ diverter region of the proposed device was enclosed trench oxide layer, the electric field moved toward trench-oxide layer, and punch through breakdown of LTIGBT with p+ diverter was occurred, lately. Therefore, the p+ diverter of the proposed LTIGBT didn't relate to breakdown voltage in a different way the conventional LTIGBT. The Latch-up current densities of the conventional LTIGBT and LTIGBT with p+ diverter were 540A/cm2, and 1453A/cm2, respectively. The enhanced latch-up capability of the LTIGBT with p+ diverter was obtained through holes in the current directly reaching the cathode via the p+ divert region and p+ cathode layer beneath n+ cathode layer.

Original languageEnglish
Number of pages4
Publication statusPublished - 2001
Event2001 International Semiconductor Conference - Sinaia, Romania
Duration: 2001 Oct 92001 Oct 13


Conference2001 International Semiconductor Conference


  • Forward blocking voltage
  • Latch-up
  • p+ diverter
  • Power integrated circuits
  • Power transistor

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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