Abstract
We report a new technology for the selective deposition of a semi-conducting single-walled carbon nanotube(SWNT) between two electrodes. This technology consists of two processes. First, to separate the most of metallic nanotubes from semi-conducting ones and align the nanotubes, we applied dc and ac voltage to the electrodes respectively. But, in spite of the separation of the metallic nanotubes from semi-conducting nanotubes, some of metallic nanotubes and semi-conducing nanotubes are still deposited together. The second process is to burn the metallic and semi-conducting nanotubes by applying the voltage between two electrodes which enable to obtain a single semi-conducting nanotube structure. We verified the trace of the burning by SEM images or AFM images, and checked the characteristic of semi-conducing nanotubes through the I-V characteristic graph.
Original language | English |
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Pages | 481-485 |
Number of pages | 5 |
DOIs | |
Publication status | Published - 2004 |
Externally published | Yes |
Event | 2004 ASME International Mechanical Engineering Congress and Exposition, IMECE 2004 - Anaheim, CA, United States Duration: 2004 Nov 13 → 2004 Nov 19 |
Other
Other | 2004 ASME International Mechanical Engineering Congress and Exposition, IMECE 2004 |
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Country/Territory | United States |
City | Anaheim, CA |
Period | 04/11/13 → 04/11/19 |
Keywords
- Burning technique
- Dielectrophoresis
- Semi-conducting carbon nanotube
- Separation
- Single-walled carbon nanotube (SWNT)
- Transistor
ASJC Scopus subject areas
- Mechanical Engineering
- Electrical and Electronic Engineering