A New Method of Forming a Thin Single-Crystal Silicon Diaphragm using Merged Epitaxial Lateral Overgrowth for Sensor Applications

James J. Pak; Gerold W. Neudeck; Abul E. Kabir; David W. Deroo; Steven E. Staller; James H. Logsdon

doi:10.1109/55.119215

A New Method of Forming a Thin Single-Crystal Silicon Diaphragm using Merged Epitaxial Lateral Overgrowth for Sensor Applications

James J. Pak, Gerold W. Neudeck, Abul E. Kabir, David W. Deroo, Steven E. Staller, James H. Logsdon

Research output: Contribution to journal › Article › peer-review

Abstract

Merged epitaxial lateral overgrowth (MELO) of silicon was combined with an SiO2 etch stop to form a novel 9-μm-thick and 250-μm x 1000-μm single-crystal silicon membrane for micromechanical sensors. When epitaxial lateral overgrowth (ELO) silicon merges on SiO2 islands, it forms a local silicon-on-insulator (SOI) film of moderate doping concentration. The SiO2 island then acts as a near-perfect etch stop in a KOH- or ethylenediamine-based solution. The silicon diaphragm thickness over a 3-in wafer had a standard deviation of 0.5 μm and is precisely controlled by the epitaxial silicon growth rate (A 0.1 μm/min) rather than by conventional etching techniques. Diodes fabricated in the substrate and over MELO regions have nearly identical reverse-bias currents indicating good quality silicon in the membrane.

Original language	English
Pages (from-to)	614-616
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	12
Issue number	11
DOIs	https://doi.org/10.1109/55.119215
Publication status	Published - 1991 Nov
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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@article{509cc75745ea4c1697a6e51efe53f23d,

title = "A New Method of Forming a Thin Single-Crystal Silicon Diaphragm using Merged Epitaxial Lateral Overgrowth for Sensor Applications",

abstract = "Merged epitaxial lateral overgrowth (MELO) of silicon was combined with an SiO2 etch stop to form a novel 9-μm-thick and 250-μm x 1000-μm single-crystal silicon membrane for micromechanical sensors. When epitaxial lateral overgrowth (ELO) silicon merges on SiO2 islands, it forms a local silicon-on-insulator (SOI) film of moderate doping concentration. The SiO2 island then acts as a near-perfect etch stop in a KOH- or ethylenediamine-based solution. The silicon diaphragm thickness over a 3-in wafer had a standard deviation of 0.5 μm and is precisely controlled by the epitaxial silicon growth rate (A 0.1 μm/min) rather than by conventional etching techniques. Diodes fabricated in the substrate and over MELO regions have nearly identical reverse-bias currents indicating good quality silicon in the membrane.",

author = "Pak, {James J.} and Neudeck, {Gerold W.} and Kabir, {Abul E.} and Deroo, {David W.} and Staller, {Steven E.} and Logsdon, {James H.}",

note = "Funding Information: Manuscript received May 8, 1991; revised August 22, 1991. This work was supported by a grant from Delco Electronics, Kokomo, IN. J. J. Pak, G. W. Neudeck, and A. E. Kabir are with the School of Electrical Engineering, F{\textquoteright}urdue University, West Lafayette, IN 47907. D. W. DeRoo, S. E. Staller, and J. H. Logsdon are with Delco Electronics, Kokomo, IN 46901. IEEE Log Number 9103993.",

year = "1991",

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doi = "10.1109/55.119215",

language = "English",

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pages = "614--616",

journal = "IEEE Electron Device Letters",

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AU - Pak, James J.

AU - Neudeck, Gerold W.

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AU - Deroo, David W.

AU - Staller, Steven E.

AU - Logsdon, James H.

N1 - Funding Information: Manuscript received May 8, 1991; revised August 22, 1991. This work was supported by a grant from Delco Electronics, Kokomo, IN. J. J. Pak, G. W. Neudeck, and A. E. Kabir are with the School of Electrical Engineering, F’urdue University, West Lafayette, IN 47907. D. W. DeRoo, S. E. Staller, and J. H. Logsdon are with Delco Electronics, Kokomo, IN 46901. IEEE Log Number 9103993.

PY - 1991/11

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N2 - Merged epitaxial lateral overgrowth (MELO) of silicon was combined with an SiO2 etch stop to form a novel 9-μm-thick and 250-μm x 1000-μm single-crystal silicon membrane for micromechanical sensors. When epitaxial lateral overgrowth (ELO) silicon merges on SiO2 islands, it forms a local silicon-on-insulator (SOI) film of moderate doping concentration. The SiO2 island then acts as a near-perfect etch stop in a KOH- or ethylenediamine-based solution. The silicon diaphragm thickness over a 3-in wafer had a standard deviation of 0.5 μm and is precisely controlled by the epitaxial silicon growth rate (A 0.1 μm/min) rather than by conventional etching techniques. Diodes fabricated in the substrate and over MELO regions have nearly identical reverse-bias currents indicating good quality silicon in the membrane.

AB - Merged epitaxial lateral overgrowth (MELO) of silicon was combined with an SiO2 etch stop to form a novel 9-μm-thick and 250-μm x 1000-μm single-crystal silicon membrane for micromechanical sensors. When epitaxial lateral overgrowth (ELO) silicon merges on SiO2 islands, it forms a local silicon-on-insulator (SOI) film of moderate doping concentration. The SiO2 island then acts as a near-perfect etch stop in a KOH- or ethylenediamine-based solution. The silicon diaphragm thickness over a 3-in wafer had a standard deviation of 0.5 μm and is precisely controlled by the epitaxial silicon growth rate (A 0.1 μm/min) rather than by conventional etching techniques. Diodes fabricated in the substrate and over MELO regions have nearly identical reverse-bias currents indicating good quality silicon in the membrane.

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A New Method of Forming a Thin Single-Crystal Silicon Diaphragm using Merged Epitaxial Lateral Overgrowth for Sensor Applications

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