TY - JOUR
T1 - A New mm-Wave Multiple-Band Single-Pole Multiple-Throw Switch with Variable Transmission Lines
AU - Kim, Younghwan
AU - Lee, Iljin
AU - Jeon, Sanggeun
N1 - Funding Information:
Manuscript received December 9, 2019; revised February 21, 2020 and March 22, 2020; accepted March 30, 2020. Date of publication May 6, 2020; date of current version July 1, 2020. This work was supported by the Institute for Information & Communications Technology Planning & Evaluation grant funded by the Korea government (MSIT) under Grant B0717-16-0047. (Corresponding author: Sanggeun Jeon.) Younghwan Kim and Sanggeun Jeon are with the School of Electrical Engineering, Korea University, Seoul 02841, South Korea (e-mail: sgjeon@korea.ac.kr).
Funding Information:
This work was supported by the Institute for Information &Communications Technology Planning &Evaluation grant funded by the Korea government (MSIT) under Grant B0717-16-0047.
Publisher Copyright:
© 1963-2012 IEEE.
PY - 2020/7
Y1 - 2020/7
N2 - This article a new multiple-band single-pole N-throw (SPNT) switch topology suitable for mm-wave applications. Compared to a conventional shunt-type SPNT switch, the proposed SPNT operates in the multiple frequency bands by adopting a variable transmission-line (T-line) structure. The variable T-line (VTL) structure consists of multiple sections of T-line and multiple shunt switches. Therefore, it realizes a variable quarter-wave line at different frequencies depending on the ON-OFF configuration of the multiple shunt switches. To validate the proposed topology, two versions of a triple-band SP3T switch operating at 20, 30, and 40 GHz are demonstrated in a 65-nm bulk CMOS technology. The first version (SW1) employs a minimum number of shunt switches in the VTL structure, thus minimizing the insertion loss. The second version (SW2) includes extra shunt switches in the VTL, thus improving the isolation. The measurement shows that SW1 exhibits insertion loss of 3, 3.4, and 3.6 dB at 20, 30, and 40 GHz, respectively. The isolations are 22.8 or 20 dB at 20 GHz, 18.5 or 21.5 dB at 30 GHz, and 19.7 or 23.5 dB at 40 GHz, depending on the operation mode. On the other hand, SW2 shows improved isolation of 36.2 or 45 dB at 20 GHz, 19.6 or 42.8 dB at 30 GHz, and 22.7 or 38.6 dB at 40 GHz. The insertion losses are 3.6, 3.8, and 3.9 dB at 20, 30, and 40 GHz, respectively.
AB - This article a new multiple-band single-pole N-throw (SPNT) switch topology suitable for mm-wave applications. Compared to a conventional shunt-type SPNT switch, the proposed SPNT operates in the multiple frequency bands by adopting a variable transmission-line (T-line) structure. The variable T-line (VTL) structure consists of multiple sections of T-line and multiple shunt switches. Therefore, it realizes a variable quarter-wave line at different frequencies depending on the ON-OFF configuration of the multiple shunt switches. To validate the proposed topology, two versions of a triple-band SP3T switch operating at 20, 30, and 40 GHz are demonstrated in a 65-nm bulk CMOS technology. The first version (SW1) employs a minimum number of shunt switches in the VTL structure, thus minimizing the insertion loss. The second version (SW2) includes extra shunt switches in the VTL, thus improving the isolation. The measurement shows that SW1 exhibits insertion loss of 3, 3.4, and 3.6 dB at 20, 30, and 40 GHz, respectively. The isolations are 22.8 or 20 dB at 20 GHz, 18.5 or 21.5 dB at 30 GHz, and 19.7 or 23.5 dB at 40 GHz, depending on the operation mode. On the other hand, SW2 shows improved isolation of 36.2 or 45 dB at 20 GHz, 19.6 or 42.8 dB at 30 GHz, and 22.7 or 38.6 dB at 40 GHz. The insertion losses are 3.6, 3.8, and 3.9 dB at 20, 30, and 40 GHz, respectively.
KW - 65-nm bulk CMOS
KW - mm-wave frequency band
KW - multiple-band operation
KW - single-pole N-throw(SPNT) switch
KW - variable T-line (VTL)
UR - http://www.scopus.com/inward/record.url?scp=85087873353&partnerID=8YFLogxK
U2 - 10.1109/TMTT.2020.2988863
DO - 10.1109/TMTT.2020.2988863
M3 - Article
AN - SCOPUS:85087873353
SN - 0018-9480
VL - 68
SP - 2551
EP - 2561
JO - IEEE Transactions on Microwave Theory and Techniques
JF - IEEE Transactions on Microwave Theory and Techniques
IS - 7
M1 - 9086792
ER -