A new process and structure for oxide semiconductor LCDs

Joon Young Yang; Sul Lee; Seong Joon Cho; Myung Chul Jun; In Byeong Kang; Sang Deog Yeo; Jung ho Park

doi:10.1002/j.2168-0159.2014.tb00122.x

A new process and structure for oxide semiconductor LCDs

Joon Young Yang, Sul Lee, Seong Joon Cho, Myung Chul Jun, In Byeong Kang, Sang Deog Yeo, Jung ho Park

School of Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Chapter

7 Citations (Scopus)

Abstract

A coplanar TFT structure has excellent characteristics in Δ Vp and channel length compared to conventional etch stopper TFT structure in AOS TFT LCD. In this paper, we introduce new 5 mask coplanar structure which reduces two mask steps compared to conventional 7 mask process. And we fabricated 4.5-inch HD resolution panel in our R&D line with our new structure, and its transmittance is 12.5% improved by eliminating contact hole pattern.

Original language	English
Title of host publication	Digest of Technical Papers - SID International Symposium
Publisher	Blackwell Publishing Ltd
Pages	469-472
Number of pages	4
Volume	45
Edition	1
DOIs	https://doi.org/10.1002/j.2168-0159.2014.tb00122.x
Publication status	Published - 2014

ASJC Scopus subject areas

Engineering(all)

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10.1002/j.2168-0159.2014.tb00122.x

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abstract = "A coplanar TFT structure has excellent characteristics in Δ Vp and channel length compared to conventional etch stopper TFT structure in AOS TFT LCD. In this paper, we introduce new 5 mask coplanar structure which reduces two mask steps compared to conventional 7 mask process. And we fabricated 4.5-inch HD resolution panel in our R&D line with our new structure, and its transmittance is 12.5% improved by eliminating contact hole pattern.",

author = "Yang, {Joon Young} and Sul Lee and Cho, {Seong Joon} and Jun, {Myung Chul} and Kang, {In Byeong} and Yeo, {Sang Deog} and Park, {Jung ho}",

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language = "English",

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T1 - A new process and structure for oxide semiconductor LCDs

AU - Yang, Joon Young

AU - Lee, Sul

AU - Cho, Seong Joon

AU - Jun, Myung Chul

AU - Kang, In Byeong

AU - Yeo, Sang Deog

AU - Park, Jung ho

PY - 2014

Y1 - 2014

N2 - A coplanar TFT structure has excellent characteristics in Δ Vp and channel length compared to conventional etch stopper TFT structure in AOS TFT LCD. In this paper, we introduce new 5 mask coplanar structure which reduces two mask steps compared to conventional 7 mask process. And we fabricated 4.5-inch HD resolution panel in our R&D line with our new structure, and its transmittance is 12.5% improved by eliminating contact hole pattern.

AB - A coplanar TFT structure has excellent characteristics in Δ Vp and channel length compared to conventional etch stopper TFT structure in AOS TFT LCD. In this paper, we introduce new 5 mask coplanar structure which reduces two mask steps compared to conventional 7 mask process. And we fabricated 4.5-inch HD resolution panel in our R&D line with our new structure, and its transmittance is 12.5% improved by eliminating contact hole pattern.

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M3 - Chapter

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SP - 469

EP - 472

BT - Digest of Technical Papers - SID International Symposium

PB - Blackwell Publishing Ltd

ER -

A new process and structure for oxide semiconductor LCDs

Abstract

ASJC Scopus subject areas

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