A new reference signal generation method for MRAM using a 90-degree rotated MTJ

W. C. Jeong, H. J. Kim, J. H. Park, C. W. Jeong, E. Y. Lee, J. H. Oh, G. T. Jeong, G. H. Koh, H. C. Koo, S. H. Lee, S. Y. Lee, J. M. Shin, H. S. Jeong, Kinam Kim

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)


A new reference signal generation method for high-density MRAM is reported. 0.4 × 0.8 μm2 magnetic tunnel junction (MTJ) elements were successfully integrated with 0.24-μm CMOS technology. By using a 90-degree rotated MTJ as a new reference signal generator, the reference resistance could be always located in the exact midpoint between high-resistance state R H and low-resistance state RL regardless of applied voltage. When tested in 8 × 8 MTJ arrays, it is found to show good fidelity to our expectations. So it is supposed that this new method is more favorable for high-density MRAM.

Original languageEnglish
Pages (from-to)2628-2630
Number of pages3
JournalIEEE Transactions on Magnetics
Issue number4 II
Publication statusPublished - 2004 Jul

Bibliographical note

Funding Information:
Manuscript received October 16, 2003. This work was supported by a grant from Samsung Advanced Institute of Technology. The authors are with the Advanced Technology Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd., Yongin-City, Gyeonggi-Do, Korea 449-711 (e-mail: wcjeong@samsung.com). Digital Object Identifier 10.1109/TMAG.2004.829328 Fig. 1. (a) Cross-sectional TEM image of fully integrated MRAM. (b) TEM image of MTJ stacking. (c) Schematic diagram of the MRAM cell layout.


  • Magnetic random access memory (MRAM)
  • Magnetic tunnel junction (MTJ)
  • Reference cell
  • Tunneling magnetoresistance (TMR)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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