A new sensing metric to reduce data fluctuations in a nanogap-embedded field-effect transistor biosensor

Chang Hoon Kim; Jae Hyuk Ahn; Kyung Bok Lee; Cheulhee Jung; Hyun Gyu Park; Yang Kyu Choi

doi:10.1109/TED.2012.2209650

A new sensing metric to reduce data fluctuations in a nanogap-embedded field-effect transistor biosensor

Chang Hoon Kim, Jae Hyuk Ahn, Kyung Bok Lee, Cheulhee Jung, Hyun Gyu Park, Yang Kyu Choi

Research output: Contribution to journal › Article › peer-review

64 Citations (Scopus)

Abstract

A new sensing metric is proposed for a field-effect transistor (FET)-based biosensor. As proof of concept, a nanogap-embedded FET is studied to reduce data fluctuations that originate from process variations during FET fabrication and environmental variations stemming from bioexperiments. The new sensing metric utilizes a crucial gate voltage (V _G@I _sub,max), which induces the maximum substrate current. The new sensing metric shows higher immunity against variations of the nanogap length, compared with the commonly used metric that relies on threshold voltage or drain current. The proposed metric also shows smaller fluctuation, which is caused by environmental variation coming from biotreatment steps. This analysis is verified experimentally and proved by device simulations. For simple analysis, the effect of external charge of the biomolecules is eliminated by using peptide nucleic acid, which is an electrically neutral biomolecule. Thus, by using such biomolecules, the permittivity effect rising from the biomolecules within the nanogap of the gate dielectric is investigated.

Original language	English
Article number	6269073
Pages (from-to)	2825-2831
Number of pages	7
Journal	IEEE Transactions on Electron Devices
Volume	59
Issue number	10
DOIs	https://doi.org/10.1109/TED.2012.2209650
Publication status	Published - 2012
Externally published	Yes

Bibliographical note

Funding Information:
Manuscript received October 4, 2011; revised May 21, 2012; accepted July 13, 2012. Date of publication August 15, 2012; date of current version September 18, 2012. This work was supported in part by the National Research and Development Program under Grant 2012-0001131 for the development of biomedical function monitoring biosensors and by the Center for Integrated Smart Sensors and the Basic Science Research Program through the National Research Foundation of Korea funded by the Ministry of Education, Science, and Technology under Grant CISS-2011-0031845 and Grant 2009-008062, respectively. The review of this paper was arranged by Editor A. M. Ionescu.

Keywords

Coefficient of variation (CV)
drain current
field-effect transistor (FET)-based biosensor
impact ionization
label free
nanogap
nanogap-embedded FET
peptide nucleic acid (PNA)
reliability
substrate current
threshold voltage

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/TED.2012.2209650

Cite this

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abstract = "A new sensing metric is proposed for a field-effect transistor (FET)-based biosensor. As proof of concept, a nanogap-embedded FET is studied to reduce data fluctuations that originate from process variations during FET fabrication and environmental variations stemming from bioexperiments. The new sensing metric utilizes a crucial gate voltage (V G@I sub,max), which induces the maximum substrate current. The new sensing metric shows higher immunity against variations of the nanogap length, compared with the commonly used metric that relies on threshold voltage or drain current. The proposed metric also shows smaller fluctuation, which is caused by environmental variation coming from biotreatment steps. This analysis is verified experimentally and proved by device simulations. For simple analysis, the effect of external charge of the biomolecules is eliminated by using peptide nucleic acid, which is an electrically neutral biomolecule. Thus, by using such biomolecules, the permittivity effect rising from the biomolecules within the nanogap of the gate dielectric is investigated.",

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note = "Funding Information: Manuscript received October 4, 2011; revised May 21, 2012; accepted July 13, 2012. Date of publication August 15, 2012; date of current version September 18, 2012. This work was supported in part by the National Research and Development Program under Grant 2012-0001131 for the development of biomedical function monitoring biosensors and by the Center for Integrated Smart Sensors and the Basic Science Research Program through the National Research Foundation of Korea funded by the Ministry of Education, Science, and Technology under Grant CISS-2011-0031845 and Grant 2009-008062, respectively. The review of this paper was arranged by Editor A. M. Ionescu.",

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A new sensing metric to reduce data fluctuations in a nanogap-embedded field-effect transistor biosensor

Abstract

Bibliographical note

Keywords

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