A new silicon-on-insulator lateral insulated-gate bipolar transistor with dual-channel structure

Woo Beom Choi; Woong Je Sung; Yong Il Lee; Man Young Sung

doi:10.1143/jjap.40.6683

A new silicon-on-insulator lateral insulated-gate bipolar transistor with dual-channel structure

Woo Beom Choi, Woong Je Sung, Yong Il Lee, Man Young Sung

* Honorary professors

Research output: Contribution to journal › Article › peer-review

Abstract

To improve the latch-up and forward voltage drop properties of the silicon-on-insulator (SOI) lateral insulated-gate bipolar transistor (LIGBT), a new SOI LIGBT structure is proposed and fabricated. The new device employs a dual-channel structure in order to enable more electrons to flow into the n-drift layer and to improve the latch-up characteristic.

Original language	English
Pages (from-to)	6683-6685
Number of pages	3
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	40
Issue number	12
DOIs	https://doi.org/10.1143/jjap.40.6683
Publication status	Published - 2001 Dec

Keywords

Dual-channel structure
Forward voltage drop
LIGBT
Latch-up current
SOI

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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10.1143/jjap.40.6683

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abstract = "To improve the latch-up and forward voltage drop properties of the silicon-on-insulator (SOI) lateral insulated-gate bipolar transistor (LIGBT), a new SOI LIGBT structure is proposed and fabricated. The new device employs a dual-channel structure in order to enable more electrons to flow into the n-drift layer and to improve the latch-up characteristic.",

keywords = "Dual-channel structure, Forward voltage drop, LIGBT, Latch-up current, SOI",

author = "Choi, {Woo Beom} and Sung, {Woong Je} and Lee, {Yong Il} and Sung, {Man Young}",

year = "2001",

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AU - Lee, Yong Il

AU - Sung, Man Young

PY - 2001/12

Y1 - 2001/12

N2 - To improve the latch-up and forward voltage drop properties of the silicon-on-insulator (SOI) lateral insulated-gate bipolar transistor (LIGBT), a new SOI LIGBT structure is proposed and fabricated. The new device employs a dual-channel structure in order to enable more electrons to flow into the n-drift layer and to improve the latch-up characteristic.

AB - To improve the latch-up and forward voltage drop properties of the silicon-on-insulator (SOI) lateral insulated-gate bipolar transistor (LIGBT), a new SOI LIGBT structure is proposed and fabricated. The new device employs a dual-channel structure in order to enable more electrons to flow into the n-drift layer and to improve the latch-up characteristic.

KW - Dual-channel structure

KW - Forward voltage drop

KW - LIGBT

KW - Latch-up current

KW - SOI

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U2 - 10.1143/jjap.40.6683

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M3 - Article

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JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

IS - 12

ER -

A new silicon-on-insulator lateral insulated-gate bipolar transistor with dual-channel structure

Abstract

Keywords

ASJC Scopus subject areas

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