Abstract
To improve the latch-up and forward voltage drop properties of the silicon-on-insulator (SOI) lateral insulated-gate bipolar transistor (LIGBT), a new SOI LIGBT structure is proposed and fabricated. The new device employs a dual-channel structure in order to enable more electrons to flow into the n-drift layer and to improve the latch-up characteristic.
Original language | English |
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Pages (from-to) | 6683-6685 |
Number of pages | 3 |
Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
Volume | 40 |
Issue number | 12 |
DOIs | |
Publication status | Published - 2001 Dec |
Keywords
- Dual-channel structure
- Forward voltage drop
- LIGBT
- Latch-up current
- SOI
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)