A noble suspended type thin film resonator (STFR) using the SOI technology

Hyun Ho Kim; Byeong Kwon Ju; Yun-Hi Lee; Si Hyung Lee; Jeon Kook Lee; Soo-Won Kim

doi:10.1016/S0924-4247(00)00551-3

A noble suspended type thin film resonator (STFR) using the SOI technology

Hyun Ho Kim, Byeong Kwon Ju, Yun-Hi Lee, Si Hyung Lee, Jeon Kook Lee, Soo-Won Kim

Research output: Contribution to journal › Article › peer-review

28 Citations (Scopus)

Abstract

The fabrication and characteristics of suspended type thin film resonators (STFRs) using surface micromachining of the SOI technology, have been studied. The size of the active part of STFRs is 160 μm × 160 μm. For the piezoelectric AlN thin film, the following etch rate was observed 200 nm min^-1 in 0.6 wt.% TMAH. The thickness of the piezoelectric AlN film for the STFR is 2 μm. Cr thin film is used as the top and bottom electrode. This device is free-standing and has a resonant frequency of 1.65 GHz for the 2 μm AlN thin film, a K_eff² of 2.4%, Q_s of 91.7, Q_p of 87.7.

Original language	English
Pages (from-to)	255-258
Number of pages	4
Journal	Sensors and Actuators, A: Physical
Volume	89
Issue number	3
DOIs	https://doi.org/10.1016/S0924-4247(00)00551-3
Publication status	Published - 2001 Apr 15

Keywords

AlN
Piezoelectric
SOI technology
Suspended
Thin film resonator

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Instrumentation
Condensed Matter Physics
Surfaces, Coatings and Films
Metals and Alloys
Electrical and Electronic Engineering

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10.1016/S0924-4247(00)00551-3

Cite this

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title = "A noble suspended type thin film resonator (STFR) using the SOI technology",

abstract = "The fabrication and characteristics of suspended type thin film resonators (STFRs) using surface micromachining of the SOI technology, have been studied. The size of the active part of STFRs is 160 μm × 160 μm. For the piezoelectric AlN thin film, the following etch rate was observed 200 nm min-1 in 0.6 wt.% TMAH. The thickness of the piezoelectric AlN film for the STFR is 2 μm. Cr thin film is used as the top and bottom electrode. This device is free-standing and has a resonant frequency of 1.65 GHz for the 2 μm AlN thin film, a Keff2 of 2.4%, Qs of 91.7, Qp of 87.7.",

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AU - Kim, Hyun Ho

AU - Ju, Byeong Kwon

AU - Lee, Yun-Hi

AU - Lee, Si Hyung

AU - Lee, Jeon Kook

AU - Kim, Soo-Won

PY - 2001/4/15

Y1 - 2001/4/15

N2 - The fabrication and characteristics of suspended type thin film resonators (STFRs) using surface micromachining of the SOI technology, have been studied. The size of the active part of STFRs is 160 μm × 160 μm. For the piezoelectric AlN thin film, the following etch rate was observed 200 nm min-1 in 0.6 wt.% TMAH. The thickness of the piezoelectric AlN film for the STFR is 2 μm. Cr thin film is used as the top and bottom electrode. This device is free-standing and has a resonant frequency of 1.65 GHz for the 2 μm AlN thin film, a Keff2 of 2.4%, Qs of 91.7, Qp of 87.7.

AB - The fabrication and characteristics of suspended type thin film resonators (STFRs) using surface micromachining of the SOI technology, have been studied. The size of the active part of STFRs is 160 μm × 160 μm. For the piezoelectric AlN thin film, the following etch rate was observed 200 nm min-1 in 0.6 wt.% TMAH. The thickness of the piezoelectric AlN film for the STFR is 2 μm. Cr thin film is used as the top and bottom electrode. This device is free-standing and has a resonant frequency of 1.65 GHz for the 2 μm AlN thin film, a Keff2 of 2.4%, Qs of 91.7, Qp of 87.7.

KW - AlN

KW - Piezoelectric

KW - SOI technology

KW - Suspended

KW - Thin film resonator

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U2 - 10.1016/S0924-4247(00)00551-3

DO - 10.1016/S0924-4247(00)00551-3

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A noble suspended type thin film resonator (STFR) using the SOI technology

Abstract

Keywords

ASJC Scopus subject areas

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