TY - JOUR
T1 - A Nonchlorinated Solvent-Processable Fluorinated Planar Conjugated Polymer for Flexible Field-Effect Transistors
AU - Lee, Myeongjae
AU - Kim, Min Je
AU - Ro, Suhee
AU - Choi, Shinyoung
AU - Jin, Seon Mi
AU - Nguyen, Hieu Dinh
AU - Yang, Jeehye
AU - Lee, Kyung Koo
AU - Lim, Dong Un
AU - Lee, Eunji
AU - Kang, Moon Sung
AU - Choi, Jong Ho
AU - Cho, Jeong Ho
AU - Kim, Bongsoo
N1 - Funding Information:
This work was supported by a grant (NRF-2015M1A2A2056218) from the Technology Development Program to Solve Climate Change of the National Research Foundation (NRF) funded by the Ministry of Science, ICT and Future Planning and a grant (NRF-2015R1D1A1A01058493) from the Basic Science Program through the NRF funded by the Ministry of Education, the New & Renewable Energy of the Korean Institute of Energy Technology Evaluation and Planning (KETEP) grant funded by the Korean Government Ministry of Knowledge Economy (20163030013900), and Center for Advanced Soft Electronics (CASE) under the Global Frontier Research Program (NRF-2013M3A6A5073177).
Publisher Copyright:
© 2017 American Chemical Society.
PY - 2017/8/30
Y1 - 2017/8/30
N2 - High carrier mobilities have recently been achieved in polymer field effect transistors (FETs). However, many of these polymer FET devices require the use of chlorinated solvents such as chloroform (CF), chlorobenzene (CB), and o-dichlorobenzene (DCB) during fabrication. The use of these solvents is highly restricted in industry because of health and environmental issues. Here, we report the synthesis of a low band gap (1.43 eV, 870 nm) semiconducting polymer (PDPP2DT-F2T2) having a planar geometry, which can be readily processable with nonchlorinated solvents such as toluene (TOL), o-xylene (XY), and 1,2,4-trimethylbenzene (TMB). We performed structural characterization of PDPP2DT-F2T2 films prepared from different solvents, and the electrical properties of the films were measured in the context of FETs. The devices exhibited an ambipolar behavior with hole dominant transport. Hole mobilities increased with increasing boiling point (bp) of the nonchlorinated solvents: 0.03, 0.05, and 0.10 cm2 V-1 s-1 for devices processed using TOL, XY, and TMB, respectively. Thermal annealing further improved the FET performance. TMB-based polymer FETs annealed at 200 °C yielded a maximum hole mobility of 1.28 cm2 V-1 s-1, which is far higher than the 0.43 cm2 V-1 s-1 obtained from the CF-based device. This enhancement was attributed to increased interchain interactions as well as improved long-range interconnection between fibrous domains. Moreover, all of the nonchlorinated solutions generated purely edge-on orientations of the polymer chains, which is highly beneficial for carrier transport in FET devices. Furthermore, we fabricated an array of flexible TMB-processed PDPP2DT-F2T2 FETs on the plastic PEN substrates. These devices demonstrated excellent carrier mobilities and negligible degradation after 300 bending cycles. Overall, we demonstrated that the organized assembly of polymer chains can be achieved by slow drying using high bp nonchlorinated solvents and a post thermal treatment. Furthermore, we showed that polymer FETs processed using high bp nonhalogenated solvents may outperform those processed using halogenated solvents.
AB - High carrier mobilities have recently been achieved in polymer field effect transistors (FETs). However, many of these polymer FET devices require the use of chlorinated solvents such as chloroform (CF), chlorobenzene (CB), and o-dichlorobenzene (DCB) during fabrication. The use of these solvents is highly restricted in industry because of health and environmental issues. Here, we report the synthesis of a low band gap (1.43 eV, 870 nm) semiconducting polymer (PDPP2DT-F2T2) having a planar geometry, which can be readily processable with nonchlorinated solvents such as toluene (TOL), o-xylene (XY), and 1,2,4-trimethylbenzene (TMB). We performed structural characterization of PDPP2DT-F2T2 films prepared from different solvents, and the electrical properties of the films were measured in the context of FETs. The devices exhibited an ambipolar behavior with hole dominant transport. Hole mobilities increased with increasing boiling point (bp) of the nonchlorinated solvents: 0.03, 0.05, and 0.10 cm2 V-1 s-1 for devices processed using TOL, XY, and TMB, respectively. Thermal annealing further improved the FET performance. TMB-based polymer FETs annealed at 200 °C yielded a maximum hole mobility of 1.28 cm2 V-1 s-1, which is far higher than the 0.43 cm2 V-1 s-1 obtained from the CF-based device. This enhancement was attributed to increased interchain interactions as well as improved long-range interconnection between fibrous domains. Moreover, all of the nonchlorinated solutions generated purely edge-on orientations of the polymer chains, which is highly beneficial for carrier transport in FET devices. Furthermore, we fabricated an array of flexible TMB-processed PDPP2DT-F2T2 FETs on the plastic PEN substrates. These devices demonstrated excellent carrier mobilities and negligible degradation after 300 bending cycles. Overall, we demonstrated that the organized assembly of polymer chains can be achieved by slow drying using high bp nonchlorinated solvents and a post thermal treatment. Furthermore, we showed that polymer FETs processed using high bp nonhalogenated solvents may outperform those processed using halogenated solvents.
KW - carrier mobility
KW - flexible electronics
KW - low bandgap polymer
KW - mechanical stability
KW - nonchlorinated solvent
KW - organic transistor
UR - http://www.scopus.com/inward/record.url?scp=85028721623&partnerID=8YFLogxK
U2 - 10.1021/acsami.7b08071
DO - 10.1021/acsami.7b08071
M3 - Article
C2 - 28783949
AN - SCOPUS:85028721623
SN - 1944-8244
VL - 9
SP - 28817
EP - 28827
JO - ACS Applied Materials and Interfaces
JF - ACS Applied Materials and Interfaces
IS - 34
ER -